Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

Ritzmann, Julian; Bart, Nikolai; Schmidt, Marcel; Kruck, Timo; Zhai, Liang; Löbl, Matthias C.; Nguyen, Giang N.; Spinnler, Clemens; Ranasinghe, Leonardo; Warburton, Richard J.; Heyn, Ch.; Wieck, A. D.; Ludwig, Arne

doi:10.3390/nano11102703

Cited by 8 publications

(4 citation statements)

References 37 publications

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“…The study of low-dimensional semiconductor heterostructures (LDSH) has gained relevance due to their high-efficient optoelectronic properties. In accordance, numerous theoretical and experimental studies have been performed [ 1 , 2 , 3 , 4 , 5 ]. Among these structures it is possible to mention the quantum wells (with charge carrier confinement along one dimension), quantum wires (confinement in two dimensions), and quantum dots (QDs).…”

Section: Introductionmentioning

confidence: 86%

Optical Properties in a ZnS/CdS/ZnS Core/Shell/Shell Spherical Quantum Dot: Electric and Magnetic Field and Donor Impurity Effects

et al. 2023

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A theoretical analysis of optical properties in a ZnS/CdS/ZnS core/shell/shell spherical quantum dot was carried out within the effective mass approximation. The corresponding Schrödinger equation was solved using the finite element method via the 2D axis-symmetric module of COMSOL-Multiphysics software. Calculations included variations of internal dot radius, the application of electric and magnetic fields (both oriented along z-direction), as well as the presence of on-center donor impurity. Reported optical properties are the absorption and relative refractive index change coefficients. These quantities are related to transitions between the ground and first excited states, with linearly polarized incident radiation along the z-axis. It is found that transition energy decreases with the growth of internal radius, thus causing the red-shift of resonant peaks. The same happens when the external magnetic field increases. When the strength of applied electric field is increased, the opposite effect is observed, since there is a blue-shift of resonances. However, dipole matrix moments decrease drastically with the increase of the electric field, leading to a reduction in amplitude of optical responses. At the moment impurity effects are activated, a decrease in the value of the energies is noted, significantly affecting the ground state, which is more evident for small internal radius. This is reflected in an increase in transition energies.

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Section: Introductionmentioning

confidence: 86%

Optical Properties in a ZnS/CdS/ZnS Core/Shell/Shell Spherical Quantum Dot: Electric and Magnetic Field and Donor Impurity Effects

et al. 2023

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“…The key is a carefully designed n-i-p diode structure and ultraclean materials [51,295] . For entanglement swapping involving the biexciton cascade, achieving identical photons from separate quantum dots could be more challenging.…”

Section: Quantum Dots For Quantum Networkmentioning

confidence: 99%

“…The result shows that the noise can be very well suppressed in GaAs droplet quantum dots and the photons of different origins can be made identical. The key is a carefully designed n-i-p diode structure and ultra-clean materials [51,295] . For entanglement swapping involving the biexciton cascade, achieving identical photons from separate quantum dots could be more challenging.…”

Section: Quantum Dots For Quantum Networkmentioning

confidence: 99%

Epitaxial quantum dots: a semiconductor launchpad for photonic quantum technologies

2022

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Epitaxial quantum dots formed by III-V compound semiconductors are excellent sources of nonclassical photons, creating single photons and entangled multi-photon states on demand. Their semiconductor nature allows for a straightforward combination with mature integrated photonic technologies, leading to novel functional devices at the single-photon level. Integrating a quantum dot into a carefully engineered photonic cavity enables control of the radiative decay rate using the Purcell effect and the realization of photon-photon nonlinear gates. In this review, we introduce the basis of epitaxial quantum dots and discuss their applications as non-classical light sources. We highlight two interfaces-one between flying photons and the quantum-dot dipole, and the other between the photons and the spin. We summarize the recent development of integrated photonics and reconfigurable devices that have been combined with quantum dots or are suitable for hybrid integration. Finally, we provide an outlook of employing quantum-dot platforms for practical applications in large-scale quantum computation and the quantum Internet.

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“…Different growth techniques are employed to achieve specific wavelength ranges suitable for applications and characterisation purposes. GaAs/AlGaAs QDs [8][9][10] created by local droplet etching and InAs/GaAs QDs formed via the Stranski-Krastanov growth mode [11] serve as notable examples. Stranski-Krastanov QDs have been extensively studied [12,13] and are well-established as high-quality single photon sources [1].…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Emission Energy Modulation of Indium Flushed Quantum Dots

Spitzer,

Bart,

Babin

et al. 2023

Crystals

Self Cite

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Semiconductor self-assembled quantum dots (QDs) have garnered immense attention for their potential in various quantum technologies and photonics applications. Here, we explore a novel approach for fine-tuning the emission wavelength of QDs by building upon the indium flush growth method: Submonolayer variations in the capping thickness reveal a non-monotonic progression, where the emission energy can decrease even though the capping thickness decreases. indium flush, a well-known technique for inducing blue shifts in quantum dot emissions, involves the partial capping of QDs with GaAs followed by a temperature ramp-up. However, our findings reveal that the capping layer roughness, stemming from fractional monolayers during overgrowth, plays a pivotal role in modulating the emission energy of these QDs. We propose increased indium interdiffusion between the QDs and the surrounding GaAs capping layer for a rough surface surrounding the QD as the driving mechanism. This interdiffusion alters the indium content within the QDs, resulting in an additional emission energy shift, counterintuitive to the capping layer’s thickness increase. We utilize photoluminescence spectroscopy to generate wafer maps depicting the emission spectrum of the QDs. Using thickness gradients, we produce systematic variations in the capping layer thickness on 3″ wafers, resulting in modulations of the emission energy of up to 26 meV.

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Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

Cited by 8 publications

References 37 publications

Optical Properties in a ZnS/CdS/ZnS Core/Shell/Shell Spherical Quantum Dot: Electric and Magnetic Field and Donor Impurity Effects

Optical Properties in a ZnS/CdS/ZnS Core/Shell/Shell Spherical Quantum Dot: Electric and Magnetic Field and Donor Impurity Effects

Epitaxial quantum dots: a semiconductor launchpad for photonic quantum technologies

Wafer-Scale Emission Energy Modulation of Indium Flushed Quantum Dots

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