We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/ InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of highperformance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.
We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs multi-quantum disks. At 5 K, a threshold low as 1.6 μJ/cm 2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface non-radiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm 2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ~ 0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.Keywords:nanowire laser, single-mode, quantum disks, low threshold, near-infrared Nanowire (NW) lasers with their ultracompact footprint, ease of integration, and low energy consumption are of great interests for future integrated photonic devices in optical interconnects and super-resolution imaging. [1][2][3][4][5][6][7] Due to its natural geometry, the NW itself forms an optical cavity and by using materials such as III-V semiconductors as the NW, gain can also be achieved simultaneously. The NW's two end facets function as the mirrors of a Fabry-Perot (F-P) cavity. [8][9][10] Unfortunately, despite its physical dimension, there are normally multiple longitudinal and transverse modes of NW-based F-P cavity that overlap with the NW gain spectrum. 11 It results in the multimode operation of the NW lasers, which is undesirable in many applications and would hinder the future applications of NW lasers. For instance, multimode operation could cause time-domain pulse broadening and signal crosstalk in optical communications, limiting the bandwidth. [12][13][14] In past decades, a variety of strategies have been developed to achieve single-mode NW lasers. Coupling multiple NW cavities could increase the free spectral range (FSR) of the resonant modes using the Vernier effect, 15,16 thereby allowing only one mode to overlap with the gain curve for the single-mode lasing. However, this would involve awkward manipulations of NWs down to the nm-scale accuracy in order to align the NWs. By patterning the NW with a periodic nanostructure or placing the NW on a grating, single lasing mode could be achieved via the distributed feedback effect. 12,17 However, this implementation involves the complicated nanofabrication processes on the NW, which can degrade the material properties. The number of resonant modes in NW F-P cavity can also be reduced by reducing the NW diameter and length, and single-mode NW lasers have been reported. 11, 18 However, reduction in NW dimension increases the optical loss significantly considerab...
GaAs nanowires are regarded as promising building blocks of future optoelectronic devices. Despite progress, the growth of high optical quality GaAs nanowires is a standing challenge. Understanding the role of...
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