Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

Abstract

We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the single InGaAs/ InP quantum well embedded in the nanowire consists of three components with different chemical compositions, axial quantum well, ring quantum well, and radial quantum well, leading to the electroluminescence emission with multiple wavelengths. The electroluminescence measurements show a strong dependence on current injection levels as well as temperatures and these are explained by interpreting the equivalent circuits in a minimized area of the device. It is also found that the electroluminescence properties are closely related to the distinctive triangular morphology with an inclined facet of the quantum well nanowire. Our study provides important new insights for further design, growth, and fabrication of highperformance quantum well-based nanowire light sources for a wide range of future optoelectronic and photonic applications.

Engineering III–V Semiconductor Nanowires for Device Applications

“…This QW disk is a result of the beveled edge at the top of InP NW core before the QW growth and can be seen in the scanning electron microscopy (SEM) images of the InP NWs. Our recent work on the single NW emission detailed in Subsection confirms that in addition to the axial and radial QWs, there is an additional QW disk emission …”

“…Compared with optically pumped lasers, monolithically integrated electrically injected light emitting sources are more desirable for real applications since no external light sources are required. Recently, by embedding InGaAs/InP quantum well into a radial junction p–i–n InP NW structure, we demonstrated multiwavelength single NW LEDs . The SEM image in Figure a shows that the InGaAs/InP quantum well NWs exhibit a unique triangular morphology with lateral inclined facets.…”

“…The SEM image in Figure a shows that the InGaAs/InP quantum well NWs exhibit a unique triangular morphology with lateral inclined facets. Detailed spherical aberration‐corrected scanning transmission electron microscopy (AC‐STEM) revealed that different facets of the InP core determine the composition and thickness of the subsequently grown InGaAs QW, leading to a complex structure with multiple components including radial, ring, and axial QWs, as shown in Figure b. As a result, the electroluminescence (EL) spectra from the LED device display peak wavelengths at ≈1.27 and ≈1.45 µm, originating from the radial and the axial quantum wells, respectively (see Figure d).…”

“…e,f) Vertical (e) and horizontal (f) cross‐sectional electric field profiles of the optical mode in the quantum well NW with an inclined side facet, as shown in (e). a–e) Reproduced with permission . Copyright 2019, American Chemical Society.…”

Extraordinary Temperature Dependent Second Harmonic Generation in Atomically Thin Layers of Transition‐Metal Dichalcogenides

“…[16,17] The remarkable layer dependent properties of TMDs suggest their potential to be used in nanoscale optical and electronic device fabrication. [18][19][20][21][22][23][24][25][26][27] Temperature is found to alter optoelectronic properties such as bandgap modulation, [17] variation in phonon modes, [28][29][30][31] and tuning in carrier mobility [32][33][34][35][36] in nano materials. Therefore, it is important to investigate the layer dependent thermal variation in 2D TMDs in order to better control and optimize the performance of electronic devices.…”