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            Compound Semiconductor Nanowire Solar Cells

Li, Ziyuan; Tan, Hark Hoe; Jagadish, Chennupati; Fu, Lan

doi:10.1002/9783527831401.ch21

Cited by 4 publications

(12 citation statements)

References 116 publications

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“…For NIR photodetection, p-i-n photodiodes based on InP nanowire arrays [81,82] are important candidates and the direct bandgap of the material is also ideal for solar cell applications. [41,83] For SWIR and MWIR photodetection, in the past, planar photodiodes based on narrow-bandgap semiconductor materials always need to operate at a low temperature to obtain high detectivity and low noise. It is because that narrow-bandgap semiconductor materials such as InGaAs, InAs, InSb and InAsSb suffer from high dark current at room temperature due to their significant generationrecombination (G-R) and minority carrier diffusion current.…”

Section: P-n Junction/heterojunction-based Photodiodesmentioning

confidence: 99%

Review on III–V Semiconductor Nanowire Array Infrared Photodetectors

et al. 2023

Adv Materials Technologies

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In recent years, III-V semiconductor nanowires have been widely investigated for infrared photodetector applications due to their direct and suitable bandgap, unique optical and electrical properties, flexibility in device design and to create heterostructures, and/or grow on a foreign substrate such as Si with more effective strain relaxation compared with planar structures. In particular, vertically aligned and ordered nanowire arrays have emerged as a promising photodetector platform, since their geometry-related light absorption and carrier transport properties can be tailored to achieve high photodetector performance and new functionalities. In this article, the state-of-the-art progress in the development of various types of infrared photodetectors based on III-V semiconductor nanowire arrays is reviewed. The nanowire synthesis/fabrication methods are introduced briefly at first, followed by discussions on the working principle and device performance of various types of nanowire array-based photodetectors and their emerging applications. Finally, we analyze the challenges and present the perspectives for the development of future low-cost, large-scale, high-performance nanowire array infrared photodetectors for practical applications.

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Section: P-n Junction/heterojunction-based Photodiodesmentioning

confidence: 99%

Review on III–V Semiconductor Nanowire Array Infrared Photodetectors

et al. 2023

Adv Materials Technologies

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“…[62] When it comes to high-resolution nanofabrication, classical electron beam lithography (EBL) is competent but suffers from high costs and limited throughput. [57,63,64] To achieve both high throughput and high resolution, new lithography methods including nanoimprint lithography (NIL) [65,66] and self-powered parallel electron lithography (SPEL) [61] are being developed. It is worth mentioning that the NIL was first proposed by Mårtensson et al Meanwhile, they compared the nanoimprinted NWA to its EBL counterpart.…”

Section: Top-down Approachesmentioning

confidence: 99%

Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells

Chen

Guo

et al. 2023

Solar RRL

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The combination of III–V compound semiconductor materials and organic semiconductor materials to construct hybrid solar cells is a potential pathway to resolve the problems of conventional doped p–n junction solar cells, such as complexities in fabrication process and high costs. This review presents the recent progress of organic–inorganic hybrid solar cells based on polymers and III–V semiconductors, from materials to devices. The available growth process for planar/nanostructured III–V semiconductor materials, along with patterning and etching processes for nanostructured materials, are reviewed. As an emphasis of this review, advanced device structure designs are reviewed for facilitation of carrier collection and high efficiency, at planar structure level and nanowire structure level, respectively. Optimization pathways for efficiency enhancement are discussed with respect to polymer layers and surface/interface passivation, respectively. Finally, perspectives on the future development of such hybrid cells are presented.

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“…While planar heterostructure growth has been optimized for decades, heterostructured bottom-up grown materials such as nanowires (NWs) are less well controlled due to the complex interplay between local growth environment, a narrow growth window, and a stochastic seeding process . Optoelectronically homogeneous and defect-free NWs are desired for photonic integrated circuits − where material quality has been shown to impact electron mobility and in photovoltaic cells ,− where improved homogeneity directly correlates to total device efficiency and functional yield . Radial quantum well (QW) heterostructures are one particular candidate for these applications due to ease of tunability and a demonstrated compatibility with highly strained systems .…”

Section: Introductionmentioning

confidence: 99%

“…Optoelectronically homogeneous and defect-free NWs are desired for photonic integrated circuits − where material quality has been shown to impact electron mobility and in photovoltaic cells ,− where improved homogeneity directly correlates to total device efficiency and functional yield . Radial quantum well (QW) heterostructures are one particular candidate for these applications due to ease of tunability and a demonstrated compatibility with highly strained systems . III–V semiconducting materials are well suited to hosting such heterostructures, as well as possessing excellent waveguiding properties, high carrier mobility, and high optical efficiency. , GaAs/GaAsP QW structures are of recent interest, as they avoid or minimize use of aluminum incorporated material such as AlGaAs in the active region, which readily oxidizes, reducing device longevity.…”

Section: Introductionmentioning

confidence: 99%

Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures

Patel

Fonseka

Zhang

et al. 2023

ACS Appl. Mater. Interfaces

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Bottom-up grown nanostructures often suffer from significant dimensional inhomogeneity, and for quantum confined heterostructures, this can lead to a corresponding large variation in electronic properties. A high-throughput characterization methodology is applied to >15,000 nanoskived sections of highly strained GaAsP/GaAs radial core/shell quantum well heterostructures revealing high emission uniformity. While scanning electron microscopy shows a wide nanowire diameter spread of 540–60 +60 nm, photoluminescence reveals a tightly bounded band-to-band transition energy of 1546–3 +4 meV. A highly strained core/shell nanowire design is shown to reduce the dependence of emission on the quantum well width variation significantly more than in the unstrained case.

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III – V Compound Semiconductor Nanowire Solar Cells

Cited by 4 publications

References 116 publications

Review on III–V Semiconductor Nanowire Array Infrared Photodetectors

Review on III–V Semiconductor Nanowire Array Infrared Photodetectors

Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells

Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures

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