Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications

Azimi, Zahra; Gagrani, Nikita; Qu, Jiangtao; Lem, Olivier Lee Cheong; Mokkapati, Sudha; Cairney, Julie M.; Zheng, Rongkun; Tan, Hark Hoe; Jagadish, Chennupati; Wong‐Leung, Jennifer

doi:10.1039/d1nh00079a

Cited by 12 publications

(17 citation statements)

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“…limited mainly due to their poor optoelectronic properties originating from a high density of surface states and the growth of imperfect crystal structures. [12][13][14][15][16] Reports on catalyst-free In x Ga 1−x As nanowires demonstrate the formation of defective crystal structures with predominantly wurtzite phase at higher In content (x > 0.7) to predominantly zinc blende phase at higher Ga content (x < 0.35). [12,13] In addition to the microstructure, In x Ga 1−x As (0 < x < 1) has a high surface recombination velocity (SRV) varying from ≈10 3 (InAs) to ≈5 × 10 5 (GaAs) cm s −1 .…”

Section: Introductionmentioning

confidence: 99%

“…[12,13] In addition to the microstructure, In x Ga 1−x As (0 < x < 1) has a high surface recombination velocity (SRV) varying from ≈10 3 (InAs) to ≈5 × 10 5 (GaAs) cm s −1 . [14][15][16] Surface recombination dominates in nanowires with a high surface-to-volume ratio and can reduce carrier lifetime and quantum efficiency, thus limiting their optoelectronic performance. However, the surface state density can be significantly reduced by growing a shell with larger bandgap around the InGaAs core, resulting in an enhancement of the emission efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…Various III-V semiconductor shells of GaAs, [17,18] AlGaAs [11,16,19] InGaP, [4,20] InP, [21,22] InAlAs, [23] and InAsP [24] have been grown on InGaAs core nanowires with different compositions for the fabrication of optoelectronic devices. Amongst these different passivation materials, InP with a higher bandgap energy of 1.34 eV and a very low SRV of 170 cm.s −1 is an ideal candidate.…”

Section: Introductionmentioning

confidence: 99%

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Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

Azimi

Gopakumar

et al. 2022

Advanced Optical Materials

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Catalyst‐free InGaAs nanowires are promising building blocks for optoelectronic devices operating at telecommunication wavelengths. Despite progress, the applications of InGaAs nanowires remain limited due to their high density of surface states that degrade their optical properties. Here, InGaAs nanowires with superior optical properties are achieved by effectively suppressing their surface states with an InP passivation shell. Optimal InP shell growth conditions and thickness to maximize the minority carrier lifetime are identified. The photoluminescence intensity of these passivated InGaAs nanowires is up to three orders of magnitude higher than that of their bare counterparts. Moreover, a long minority carrier lifetime of up to ≈13 ns is measured with these passivated nanowires at room temperature. Optimal passivation of InGaAs nanowires with an emission wavelength of 1530 nm results in an ultra‐low surface recombination velocity of ≈280 cm s−1. In addition to the shell, the crystal structure of these nanowires plays an important role in the luminescence intensity. Combined cathodoluminescence mapping and high‐resolution transmission electron microscopy along the nanowires reveal significantly lower emission intensities in wurtzite predominant sections of the nanowires than zinc blende predominant ones.These insights on the optimal passivation of InGaAs provide directions for engineering high‐performance nanoscale‐devices in the telecommunication wavelength.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

Azimi

Gopakumar

et al. 2022

Advanced Optical Materials

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“…Controlling the shape of surface structures is fundamental for various applications including optical and electronical devices, sensors, catalysis, membranes and surface wetting properties. [1][2][3][4] Ordered surface structures are omnipresent in Nature as reported for example for the cicada wings able to both repel water and kill bacteria, or for the gecko known for its strong adhesion to substrates and surface hydrophobicity. [5][6][7][8][9][10] Among the surface structures, nanotubes were reported as unique surface structures with tunable surface hydrophobicity and water/substrate adhesion.…”

Section: Introductionmentioning

confidence: 99%

Tunable Nanoporous Structures with Rose Petal Effect by Soft‐Template Electropolymerization of Benzotrithiophene Monomers

et al. 2022

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Here, various original benzotrithiophene-based monomers are synthesized and studied for their capacity to form nanoporous structures by soft-template electropolymerization in organic solvent while studying the influence of water (H 2 O). Here, nanoporous structures are especially observed in solvent saturated with H 2 O, while the substituent has in influence especially on the size of the porous structures. The highest hydrophobic properties Θ w = 141.1°are obtained with perfluorooctyl chains (BTT-F 8 ), which leads to a huge number of nanoporous structures of extremely small size. Moreover, the surfaces have also strong water adhesion comparable to rose petals or gecko foot and could be used in future applications in water harvesting systems.

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“…III–V compound semiconductors such as GaAs have excellent electronic and optoelectronic properties that have been applied to various device structures, including solar cells, , photodetectors, and lasers. − Currently, III–V-based devices are relatively expensive, with about a third of the cost attributed to the expensive single-crystal substrate used for epitaxy. With the rising demands for light-weight, wearable, transparent, and cost-effective electronic and optoelectronic devices, the choice of substrates for epitaxy is shifting rapidly from thick and rigid single-crystal substrates to unconventional substrates, such as two-dimensional atomic-layered materials (2D-ALMs). − Since the discovery of graphene, there has been a rapid increase in the exploration of many other 2D-ALMs, including MoS 2 and hexagonal boron nitride, for various applications, one of which is their use as substrates for the growth of III–V thin films and nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal–Organic Chemical Vapor Deposition

Vilasam

Prasanna

Yuan

et al. 2022

ACS Appl. Mater. Interfaces

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The epitaxial growth of III–V nanowires with excellent optoelectronic properties on low-cost, light-weight, and flexible substrates is a key step for the design and engineering of future optoelectronic devices. In our study, GaAs nanowires were grown on synthetic mica, a two-dimensional layered material, via vapor–liquid–solid growth using metal–organic chemical vapor deposition. The effect of basic epitaxial growth parameters such as temperature and V/III ratio on the vertical yield of the nanowires is investigated. A vertical yield of over 60% is achieved at an optimum growth temperature of 400 °C and a V/III ratio 18. The structural properties of the nanowires are investigated using various techniques including scanning electron microscopy, high-resolution transmission electron microscopy, and high-angle annular dark-field imaging. The vertical nanowires grown at a low temperature and a high V/III ratio are found to have a zincblende phase with a [111] B polarity. The optical properties are investigated by photoluminescence (PL) and time-resolved PL measurements. First-principles electronic structure calculations within the framework of density functional theory elucidate the van der Waals nature of the nanowire/mica interface. Our results also show that these nanowires can be easily lifted off the bulk 2D mica template, providing a pathway for flexible nanowire devices.

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Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications

Abstract: GaAs nanowires are regarded as promising building blocks of future optoelectronic devices. Despite progress, the growth of high optical quality GaAs nanowires is a standing challenge. Understanding the role of...

Cited by 12 publications

References 48 publications

Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics

Tunable Nanoporous Structures with Rose Petal Effect by Soft‐Template Electropolymerization of Benzotrithiophene Monomers

Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal–Organic Chemical Vapor Deposition

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