In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV–VIS, I–V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

Articles you may be interested inAlternating current conduction behavior of excimer laser ablated SrBi 2 Nb 2 O 9 thin films Electrical properties of (001)-and (116)-oriented epitaxial SrBi 2 Ta 2 O 9 thin films prepared by metalorganic chemical vapor deposition Properties of SrBi 2 Ta 2 O 9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique Appl.

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Absfruct: Ferroelectric SrBi2Ta209 (SBT) thin films with 20 mol% excess Bi content have been deposited on the Bi4Ti3OI2 (BTO) buffered Pt/Ti/SiQ/Si substrates using the metal organic solution deposition (MOSD) technique at annealing temperatures ranging from 650°C to 750°C. The BTO single buffer layer with different excess Bi content (Omol%, 20mol% and 4Omol%) was prepared by the same deposition method. No pyrochlore phase was found in the SBT Uun films although the Bi2Ti207 phase appeared in the BTO buffer layer. The effects of the BTO buffer layer and post annealing temperature on the dielectric and ferroelectric properties of SBT thin films were analyzed.

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