Effects of a Bi/sub 4/Ti/sub 3/O/sub 12/ buffer layer on SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films prepared by the metal organic solution deposition technique

Abstract

Absfruct: Ferroelectric SrBi2Ta209 (SBT) thin films with 20 mol% excess Bi content have been deposited on the Bi4Ti3OI2 (BTO) buffered Pt/Ti/SiQ/Si substrates using the metal organic solution deposition (MOSD) technique at annealing temperatures ranging from 650°C to 750°C. The BTO single buffer layer with different excess Bi content (Omol%, 20mol% and 4Omol%) was prepared by the same deposition method. No pyrochlore phase was found in the SBT Uun films although the Bi2Ti207 phase appeared in the BTO buffer layer. The effects of the BTO buffer layer and post annealing temperature on the dielectric and ferroelectric properties of SBT thin films were analyzed.

Low‐Temperature Fabrication and Enhanced Ferro‐ and Piezoelectric Properties of Bi3.7Nd0.3Ti3O12 Films on Indium TinOxide/Glass Substrates

“…More importantly, the predominantly (100)-oriented BNT0.3 film can be obtained even at 5501C, which is the lowest annealing temperature for the formation of all predominantly (100)-oriented Bi-layered ferroelectric films in the published literatures. 9,13,[16][17][18] The relative intensity of (200) peak [I (200) /I (117) ] reaches the highest value at 6001C. Further increase of the annealing temperature results in a drop of I (200) /I (117) (as shown in the inset of Fig.…”

“…Similar structure evolution has been observed in the predominantly (100)-oriented SrBi 2 Ta 2 O 9 and CaBi 4 Ti 4 O 15 films fabricated using the same sequential layer annealing method. 16,17 This suggests that the formation of the predominantly (100)-oriented films by using the sequential layer annealing method is intrinsic for the Bi-layered perovskite family, i.e., the growth mode should be related to the unique anisotropy of their crystal structures. We believe that the high diffusivity of bismuth leads to that the growth rate along a-axis is higher than that along the direction close to normal of the (001) facet, because the perovskite layers are broken by the bismuth oxide layers along the (001) orientation.…”