2017
DOI: 10.1016/j.jphotochem.2017.09.016
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The characteristics of IGZO/ZnO/Cu2O:Na thin film solar cells fabricated by DC magnetron sputtering method

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Cited by 19 publications
(7 citation statements)
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“…Additionally, the semiconductor band gap was determined to be 1.98 and 2.31 eV using UV–vis diffuse reflectance spectroscopy (Figure b), calculated from the straight-line fit of the linear regime of the Tauc plot (Figure c). These two optical band gaps can be assigned to the CuO and Cu 2 O, respectively, and agree with previous reports. ,, …”
Section: Resultssupporting
confidence: 92%
See 1 more Smart Citation
“…Additionally, the semiconductor band gap was determined to be 1.98 and 2.31 eV using UV–vis diffuse reflectance spectroscopy (Figure b), calculated from the straight-line fit of the linear regime of the Tauc plot (Figure c). These two optical band gaps can be assigned to the CuO and Cu 2 O, respectively, and agree with previous reports. ,, …”
Section: Resultssupporting
confidence: 92%
“…These two optical band gaps can be assigned to the CuO and Cu 2 O, respectively, and agree with previous reports. 7,60,61 The potential dependence of the photocurrent was further explored using linear sweep voltammetry. Figure 5a compares the current density observed in a CO 2 -saturated solution from the different electrodes (Ag dendrites and Ag/Cu 2 O/CuO dendrites) and from the Ag/Cu 2 O/CuO dendrite electrode under three different illumination conditions (light, dark, and chopped light conditions) (Figure 5b).…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Also, the electrical properties of the films (Table I) are very close to literature values. 48 As expected, n-type zinc oxide films have carrier concentration much higher and resistivity much lower than p-type Cu 2 O samples. 49…”
Section: Sample Preparationsupporting
confidence: 59%
“…Oxide semiconductors are used in various applications, including flat-panel displays [ 1 , 2 ], optical sensors [ 3 , 4 ], and solar cells [ 5 , 6 ], owing to their excellent electrical and optical properties. Among them, the amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) have attracted considerable attention for applications in flat-panel displays thanks to their high electrical performances [ 7 , 8 , 9 , 10 , 11 , 12 ] and manufacturability over a large area [ 13 ].…”
Section: Introductionmentioning
confidence: 99%