This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface roughness than crystallographic planes with other orientations, including the a-GaN plane. The grooves and slope (Cuboids) at the channel base are also investigated. The agitation does not assist in Cuboid removal or crystallographic planes etching rate enhancement. Finally, the impact of UV light on m and a-GaN crystal plane etching rates in TMAH has been studied with and without UV light. Accordingly, it is found that the m-GaN plane etching rate is enhanced from 0.69 to 1.09 nm/min with UV light; in the case of a-GaN plane etching, UV light enhances the etching rate from 2.94 to 4.69 nm/min.
A non-invasive piezoelectric-based sheet sensor is utilised for the deliberate measurement of heartbeat rate and blood pressure. It may consist of a single sheet to capture various temporal signals or it can be formed as an array of small piezoelectric sensors to capture the temporal and spatial cardiac signals over the chest to give an added spatial granularity on top of the localised temporal signal. The mechanical activity of the heart will cause the piezoelectric sheet to deform, and thus produce a voltage signal. To count the heartbeat rate, a mechanical model has been developed using the corresponding electric waveform; a compression ratio is defined due to the delay as a result of the physical coupling mechanism. Validation of the obtained results has been performed using conventional techniques and apparatus. The quantitative assessment shows low errors when compared with other conventional meters.
Simple and accurate models for Gate leakage current (Ig) in nanoscale Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are proposed in this paper.The accurate modeling for Oxide Electric field ( E ox) andOxide voltage (Vox) due to Short Channel Effect (SCE) between the gate and inverted channel is the key for higher accuracy. The Oxide Potential drop due to the charges image at the interface between silicon and silicon Oxide insulator (/1(/10, ) is included also at gate to drain and source overlapped leakages (Igdo). The evaluation results for the proposed models matches the results of BSIM4 level 54 model using HSPICE and other published models.
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