Gate leakage current accurate models for nanoscale MOSFET transistors

Abstract

Simple and accurate models for Gate leakage current (Ig) in nanoscale Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are proposed in this paper.The accurate modeling for Oxide Electric field ( E ox) andOxide voltage (Vox) due to Short Channel Effect (SCE) between the gate and inverted channel is the key for higher accuracy. The Oxide Potential drop due to the charges image at the interface between silicon and silicon Oxide insulator (/1(/10, ) is included also at gate to drain and source overlapped leakages (Igdo). The evaluation results for the proposed models matches the results of BSIM4 level 54 model using HSPICE and other published models.

Accurate leakage current models for MOSFET nanoscale devices

“…As it is explained in [14], the flowing of electrons from the silicon to the oxide causes an image charge at the interface between the Si and SiO 2 on the oxide region, this cause also a remarkable reduction at the Oxide Electrostatic Potential (OEP) and causes an increasing in the gate current by the value of (ΔΦ ox ). According to the cancellation of negative and positive trap charge at the edge of the overlapping region near the gate side, the term of the flat band voltage will cancel each other, more details regarding this flat band voltage equation of the electric field for the overlapping region is given by [11,12] The total leakage overlapping leakage will be as in the equation (8) [11,12,15].…”