Many in-memory computing frameworks demand electronic devices with specific switching characteristics to achieve the desired level of computational complexity. Existing memristive devices cannot be reconfigured to meet the diverse volatile and non-volatile switching requirements, and hence rely on tailored material designs specific to the targeted application, limiting their universality. “Reconfigurable memristors” that combine both ionic diffusive and drift mechanisms could address these limitations, but they remain elusive. Here we present a reconfigurable halide perovskite nanocrystal memristor that achieves on-demand switching between diffusive/volatile and drift/non-volatile modes by controllable electrochemical reactions. Judicious selection of the perovskite nanocrystals and organic capping ligands enable state-of-the-art endurance performances in both modes – volatile (2 × 106 cycles) and non-volatile (5.6 × 103 cycles). We demonstrate the relevance of such proof-of-concept perovskite devices on a benchmark reservoir network with volatile recurrent and non-volatile readout layers based on 19,900 measurements across 25 dynamically-configured devices.
All‐solid‐state lithium ion batteries (LIB) are currently the most promising technology for next generation electrochemical energy storage. Many efforts have been devoted in the past years to improve performance and safety of these devices. Nevertheless, issues regarding chemical and mechanical stability of the different components still hinder substantial improvements. Pulsed laser deposition (PLD) has proved to be an outstanding technique for the deposition of thin films of materials of interest for the fabrication of LIB. Thanks to its versatility and possible fine tuning of the thin film properties, PLD promises to be a very powerful tool for the fabrication of model systems which would allow to study in detail material properties and mechanisms contributing to LIB degradation. Nevertheless, PLD presents difficulties in the deposition of LIB components, mainly due to the presence of elements with large difference of atomic mass in their chemical composition. In this review, we report the main challenges and solution strategies used for the deposition through PLD of complex oxides thin films for LIB.
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