Abstract-A time-interleaved A-D converter (ADC) system is an effective way to implement a high-sampling-rate ADC with relatively slow circuits. In the system, several channel ADCs operate at interleaved sampling times as if they were effectively a single ADC operating at a much higher sampling rate. However, mismatches such as offset, gain mismatches among channel ADCs as well as timing skew of the clocks distributed to them degrade S/N of the ADC system as a whole. This paper analyzes the channel mismatch effects in the time-interleaved ADC system. Previous analysis showed the effect for each mismatch individually, however in this paper we derive explicit formulas for the mismatch effects when all of offset, gain and timing mismatches exist together. We have clarified that the gain and timing mismatch effects interact with each other but the offset mismatch effect is independent from them, and this can be seen clearly in frequency domain. We also discuss the bandwidth mismatch effect. The derived formulas can be used for calibration algorithms to compensate for the channel mismatch effects.
The five-layer asymmetric coupled quantum well (FACQW) is a new potential-tailored quantum well (QW) for ultrafast and low-voltage optical modulators and switches. First, the influence of one monolayer (ML) thickness variation of a single layer in the GaAs/AlGaAs FACQW on the electrorefractive index change Δn is theoretically studied. The thickness variation of two thicker GaAs layers has a considerable influence on Δn of the FACQW, while the thickness variation of thin AlAs and AlGaAs barrier layers has a smaller influence on Δn. The ratio of the thicknesses of the two GaAs well layers significantly affects the Δn characteristics of the FACQW. The change Δn does not vary appreciably as long as the ratio is kept constant. Second, the influence of the statistical fluctuation of the layer thickness by 1 ML in all of the layers on the Δn characteristics of the FACQW is also discussed. Even when Δn decreases with the increase of the occurrence probability of a layer being thicker or thinner by 1 ML, the FACQW still has a much larger Δn than conventional rectangular quantum wells do.
We have obtained an analytic expression for the k dependence of excitation energy gap for an arbitrary double S = 1/2 spin-chain by using the nonlocal unitary transformation and the variational method. It is checked to explain the gap behavior of various systems, which include the Haldane system and the dimer system in both extreme limits, and also the ladder model and the Majumdar-Ghosh model. The string order parameter, the dimer order parameter, and the local spin value are also calculated in the ground state. The ground-state energy exhibits a great stabilization by an antiferromagnetic bond dimerization, which might be realized in various new compounds. We also mention the relation of the convergence to the Haldane state with the spin-exchange symmetry of the model. The excited state has one domain wall of a local triplet type except in the vicinity of the Majumdar-Ghosh point, where a local triplet is decomposed to two S = 1/2 free spins moving among the singlet dimers. 75.10.Jm, 75.40.Cx, 75.60.Ch 2 3 τ n J 2 J 2 J 3 J 1 J 1 τ n+1 σ n+1 FIG. 1. Shape of the general double spin-chain model we treat in this paper.
The five-layer asymmetric coupled quantum well (FACQW) is a new potential-tailored quantum well for ultrafast and low-voltage optical modulators and switches. Almost linear and large electrorefractive index change can be obtained in the transparency wavelength regions. In the GaAs/AlGaAs FACQW, an abrupt change in refractive index change n due to an applied electric field F occurs at a certain electric field range, which results in an anomalous sharp dip of n versus F. The physical origin and the elimination of the dip are discussed in detail. The abrupt change of refractive index is caused by significant changes of the wavefunction overlap integrals (and exciton binding energies) of transitions between the ground states for an electron (e1) and a heavy hole (hh1), and transitions between e1 and the first excited state for a heavy hole (hh2). The overlap changes are mainly due to shifts of the wavefunction distribution of hh1 and hh2, respectively. The dip can be eliminated by changing the position or Al content of the AlGaAs barrier layer in the FACQW. In addition, the larger negative index change in a modified FACQW structure is demonstrated.KEYWORDS: five-layer asymmetric coupled quantum well (FACQW), quantum well, optical modulator, optical switch, quantum confined Stark effect, electrorefractive effect, electroabsorptive effect, binding energy, wavefunction overlap, dip of refractive index change 6329
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