Abstract-A time-interleaved A-D converter (ADC) system is an effective way to implement a high-sampling-rate ADC with relatively slow circuits. In the system, several channel ADCs operate at interleaved sampling times as if they were effectively a single ADC operating at a much higher sampling rate. However, mismatches such as offset, gain mismatches among channel ADCs as well as timing skew of the clocks distributed to them degrade S/N of the ADC system as a whole. This paper analyzes the channel mismatch effects in the time-interleaved ADC system. Previous analysis showed the effect for each mismatch individually, however in this paper we derive explicit formulas for the mismatch effects when all of offset, gain and timing mismatches exist together. We have clarified that the gain and timing mismatch effects interact with each other but the offset mismatch effect is independent from them, and this can be seen clearly in frequency domain. We also discuss the bandwidth mismatch effect. The derived formulas can be used for calibration algorithms to compensate for the channel mismatch effects.
The five-layer asymmetric coupled quantum well (FACQW) is a new potential-tailored quantum well (QW) for ultrafast and low-voltage optical modulators and switches. First, the influence of one monolayer (ML) thickness variation of a single layer in the GaAs/AlGaAs FACQW on the electrorefractive index change Δn is theoretically studied. The thickness variation of two thicker GaAs layers has a considerable influence on Δn of the FACQW, while the thickness variation of thin AlAs and AlGaAs barrier layers has a smaller influence on Δn. The ratio of the thicknesses of the two GaAs well layers significantly affects the Δn characteristics of the FACQW. The change Δn does not vary appreciably as long as the ratio is kept constant. Second, the influence of the statistical fluctuation of the layer thickness by 1 ML in all of the layers on the Δn characteristics of the FACQW is also discussed. Even when Δn decreases with the increase of the occurrence probability of a layer being thicker or thinner by 1 ML, the FACQW still has a much larger Δn than conventional rectangular quantum wells do.
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