Commercially available health monitors rely on rigid electronic housing coupled with aggressive adhesives and conductive gels, causing discomfort and inducing skin damage. Also, research‐level skin‐wearable devices, while excelling in some aspects, fall short as concept‐only presentations due to the fundamental challenges of active wireless communication and integration as a single device platform. Here, an all‐in‐one, wireless, stretchable hybrid electronics with key capabilities for real‐time physiological monitoring, automatic detection of signal abnormality via deep‐learning, and a long‐range wireless connectivity (up to 15 m) is introduced. The strategic integration of thin‐film electronic layers with hyperelastic elastomers allows the overall device to adhere and deform naturally with the human body while maintaining the functionalities of the on‐board electronics. The stretchable electrodes with optimized structures for intimate skin contact are capable of generating clinical‐grade electrocardiograms and accurate analysis of heart and respiratory rates while the motion sensor assesses physical activities. Implementation of convolutional neural networks for real‐time physiological classifications demonstrates the feasibility of multifaceted analysis with a high clinical relevance. Finally, in vivo demonstrations with animals and human subjects in various scenarios reveal the versatility of the device as both a health monitor and a viable research tool.

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Polyurethane microcapsules containing water-borne polyurethane (PU) paint as a core material for self-repairing protection coatings were successfully manufactured via interfacial polymerization of diol–diisocyanate prepolymer and 1,4-butanediol as a chain extender in an emulsion solution.

In this paper, current conduction mechanisms of an atomic-layer-deposited HfO2 gate stacked on different thicknesses of thermally nitrided SiO2 based on n-type 4H SiC have been investigated and analyzed. Current-voltage and high-frequency capacitance-voltage measurements conducted at various temperatures (25−140 °C) were performed in metal-oxide-semiconductor test structures with 13 nm thick HfO2 stacked on 0-, 2-, 4-, or 6 nm thick nitrided SiO2. Various conduction mechanisms, such as Schottky emission, Fowler-Nordheim tunneling, Poole-Frenkel emission, and space-charge-limited conduction, have been systematically evaluated. The mechanisms of the current conducted through the oxides were affected by the thickness of the nitrided oxide and the electric field applied. Finally, current conduction mechanisms that contributed to hard and soft dielectric breakdown have been proposed.

Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the electrical properties with microstructural change. The ohmic behavior was observed at temperatures higher than 900 °C, but Ni2Si phase, as formerly reported to be responsible for ohmic contact, was formed after annealing at 600 °C. The higher work function of Ni2Si than Ni and the observation of graphite phase on the surface of Ni silicide after annealing at 950 °C support that a number of carbon vacancies were produced below the contact, playing a key role in forming an ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.

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