In this research work, nanocrystalline BST (Ba 0.6 Sr 0.4 TiO 3 ) powders were synthesized through a modified sol-gel process, using barium acetate, strontium acetate and titanium isopropoxide as the precursors. In this process, stoichiometric proportions of barium acetate and strontium acetate were dissolved in acetic acid and titanium (IV) isopropoxide was added to form BST gel. The as-formed gel was dried at 200°C and then calcined in the temperature range of 600 to 850°C for crystallization. The samples were characterized by infrared spectroscopy method (FT-IR), X-ray diffraction technique (XRD) and field emission scanning electron microscope (FESEM) and energy dispersive X-ray spectroscopy. EDS analysis of these samples confirmed the formation of the final phase with the special stoichiometry. The formation of a cubic perovskite crystalline phase with nanoscale dimension was detected using the mentioned techniques. The results showed that the obtained crystallite sizes were 33 and 37 nm for BST powder calcined at 750 and 850°C, respectively.

The application of porous silicon (PSi) for gas sensing devices has gained a considerable attention in the last decade. This work considers the electrical features of PSi layers prepared by electrochemical etching. We find that in order to get a better understanding of the absorption properties of PSi surface, it is necessary to know how the PSi morphology depends on the etching parameters. The physical structure of PSi, i.e., porosity, and pore size distribution can be controlled by changing the Hydrofluoric Acid concentration, current density, anodizing length and etching time in anodizing procedure. We describe our test system for gas sensors and investigate on the electrical behavior of PSi layers (p-type) in N 2 gas for various fabrication conditions. The results show that the current density increases significantly as N 2 gas is adsorbed. The measurements of the I-V characteristics were carried out at atmospheric pressure, room temperature, and with N 2 gas as well.

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