In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature. Recent conventional gating experiments on superconducting metal nano-structures showed full suppression of the critical current without variations of the normal state resistance and the critical temperature. These results still miss a microscopic explanation. In this article, we show a complete set of gating experiments on Ti-based superconducting Dayem bridges and a suggested classical thermodynamic model which seems to account for several of our experimental findings. In particular, zero-bias resistance and critical current IC measurements highlight the following: the suppression of IC with both polarities of gate voltage, the surface nature of the effect, the critical temperature independence from the electric field and the gate-induced growth of a sub-gap dissipative component. In addition, the temperature dependence of the Josephson critical current seems to show the transition from the ballistic Kulik-Omelyanchuck behavior to the Ambegaokar-Baratoff tunnel-like characteristic by increasing the electric field. Furthermore, the IC suppression persists in the presence of sizeable perpendicular-to-plane magnetic fields. We propose a classical thermodynamic model able to describe some of the experimental observations of the present and previous works. Above all, the model grabs the bipolar electric field induced suppression of IC and the emergence of a sub-gap dissipative component near full suppression of the supercurrent. Finally, applications employing the discussed effect are proposed.
Static electric fields have negligible influence on the electric and transport properties of a metal because of the screening effect. This belief was extended to conventional metallic superconductors. However, recent experiments have shown that the superconductor properties can be controlled and manipulated by the application of strong electrostatic fields. Here, we review the experimental results obtained in the realization of field-effect metallic superconducting devices exploiting this phenomenon. We start by presenting the pioneering results on superconducting Bardeen-Cooper-Schrieffer (BCS) wires and nano-constriction Josephson junctions (Dayem bridges) made of different materials, such as titanium, aluminum and vanadium. Then, we show the mastering of the Josephson supercurrent in superconductor-normal metal-superconductor proximity transistors suggesting that the presence of induced superconducting correlations is enough to see this unconventional field-effect. Later, we present the control of the interference pattern in a superconducting quantum interference device indicating the coupling of the electric field with the superconducting phase. We conclude this review discussing some devices that may represent a breakthrough in superconducting quantum and classical computation.
Recently, the possibility to tune the critical current of conventional metallic superconductors via electrostatic gating was shown in wires, Josephson weak-links, and superconductor-normal metal–superconductor junctions. Here, we exploit such a technique to demonstrate a gate-controlled vanadium-based Dayem nano-bridge operated as a half-wave rectifier at 3 K. Our devices exploit the gate-driven modulation of the critical current of the Josephson junction and the resulting steep variation of its normal-state resistance, to convert an AC signal applied to the gate electrode into a DC one across the junction. All-metallic superconducting gated rectifiers could provide the enabling technology to realize tunable photon detectors and diodes useful for superconducting electronics circuitry.
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