Field-effect control of metallic superconducting systems

Paolucci, Federico; Simoni, Giorgio De; Solinas, Paolo; Strambini, Elia; Puglia, Claudio; Ligato, Nadia; Giazotto, Francesco

doi:10.1116/1.5129364

Cited by 46 publications

(69 citation statements)

References 98 publications

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“…1(c), for several temperatures. The effect is bipolar in V Gate (not shown here) and is consistent with what has been reported for different materials [1]. V Gate has little to no effect at low values until a sudden decrease close to V C Gate .…”

Section: A Electric Field Vs In-and Out-of-plane Magnetic Fieldsupporting

confidence: 92%

“…At V Gate = 25 V, the leakage current I ≈ 7 × 10 −11 A, giving a gate-device resistance of R ≈ 0.63 T . This is of the same order of magnitude as reported in previous works [1].…”

Section: A Experimental Device: Fabrication and Transportsupporting

confidence: 90%

“…As in similar experiments [1,2,6,7,[9][10][11], the critical current can be reduced, up to complete suppression at the critical gate voltage V C…”

Section: A Electric Field Vs In-and Out-of-plane Magnetic Fieldsupporting

confidence: 68%

“…Above V C Gate some residual nonlinearity lingers, before the device becomes completely ohmic [see the 24 V line in Fig. 1(d)] [1].…”

Section: A Electric Field Vs In-and Out-of-plane Magnetic Fieldmentioning

confidence: 99%

“…Recently, it has been shown that the superconducting (SC) properties of metallic Bardeen-Cooper-Schrieffer (BCS) superconductors can be influenced via electrostatic gating [1]. The most striking effect: reduction and suppression of the critical supercurrent, has been broadly demonstrated in metallic nanowires [2][3][4] and Dayem bridges [5][6][7][8] made of titanium, titanium nitrate, aluminum, niobium, and vanadium, as well as in aluminum-copper-aluminum Josephson junctions [9].…”

Section: Introductionmentioning

confidence: 99%

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Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Bours

Mercaldo

Cuoco

et al. 2020

Phys. Rev. Research

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We demonstrate that superconducting aluminium nanobridges can be driven into a state with complete suppression of the critical supercurrent via electrostatic gating. Probing both in-and out-of-plane magnetic field responses in the presence of electrostatic gating can unveil the mechanisms that primarily cause the superconducting electric field effects. Remarkably, we find that a magnetic field, independently of its orientation, has only a weak influence on the critical electric field that identifies the transition from the superconducting state to a phase with vanishing critical supercurrent. This observation points to the absence of a direct coupling between the electric field and the amplitude of the superconducting order parameter or 2π-phase slips via vortex generation. The magnetic field effect observed in the presence of electrostatic gating is described within a microscopic model where a spatially uniform interband π phase is stabilized by the electric field. Such an intrinsic superconducting phase rearrangement can account for the suppression of the supercurrent, as well as for the weak dependence of the critical magnetic fields on the electric field.

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Section: A Electric Field Vs In-and Out-of-plane Magnetic Fieldsupporting

confidence: 92%

“…At V Gate = 25 V, the leakage current I ≈ 7 × 10 −11 A, giving a gate-device resistance of R ≈ 0.63 T . This is of the same order of magnitude as reported in previous works [1].…”

Section: A Experimental Device: Fabrication and Transportsupporting

confidence: 90%

“…As in similar experiments [1,2,6,7,[9][10][11], the critical current can be reduced, up to complete suppression at the critical gate voltage V C…”

Section: A Electric Field Vs In-and Out-of-plane Magnetic Fieldsupporting

confidence: 68%

“…Above V C Gate some residual nonlinearity lingers, before the device becomes completely ohmic [see the 24 V line in Fig. 1(d)] [1].…”

Section: A Electric Field Vs In-and Out-of-plane Magnetic Fieldmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Bours

Mercaldo

Cuoco

et al. 2020

Phys. Rev. Research

Self Cite

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Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

Koch,

Cirillo,

Battisti

et al. 2024

Nano Res.

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The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for the GCS effect must be identified. Top-down fabrication protocols should also be optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show a GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor niobium rhenium with varying ratios of the constituents (NbRe). Unlike other devices previously reported and made with a top-down approach, our NbRe devices systematically exhibit a GCS effect when they were fabricated from NbRe thin films with small grain size and etched in specific conditions. These observations pave the way for the realization of top-down-made GCS devices with high scalability. Our results also imply that physical parameters like structural disorder and surface physical properties of the nanobridges, which can be in turn modified by the fabrication process, are crucial for a GCS observation, providing therefore also important insights into the physics underlying the GCS effect.

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Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires

et al. 2021

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Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying ≃±23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.

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Field-effect control of metallic superconducting systems

Cited by 46 publications

References 98 publications

Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires

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