Vanadium gate-controlled Josephson half-wave nanorectifier

Puglia, Claudio; Simoni, Giorgio De; Ligato, Nadia; Giazotto, Francesco

doi:10.1063/5.0013512

Cited by 27 publications

(40 citation statements)

References 41 publications

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“…Recently, it has been shown that the superconducting (SC) properties of metallic Bardeen-Cooper-Schrieffer (BCS) superconductors can be influenced via electrostatic gating [1]. The most striking effect: reduction and suppression of the critical supercurrent, has been broadly demonstrated in metallic nanowires [2][3][4] and Dayem bridges [5][6][7][8] made of titanium, titanium nitrate, aluminum, niobium, and vanadium, as well as in aluminum-copper-aluminum Josephson junctions [9]. Moreover, recent experiments have probed the effect of electrostatic gating on the SC phase in a SQUID [10], and on the nature of the switching current distributions in gated titanium Dayem bridges [11].…”

Section: Introductionmentioning

confidence: 99%

Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Bours

Mercaldo

Cuoco

et al. 2020

Phys. Rev. Research

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We demonstrate that superconducting aluminium nanobridges can be driven into a state with complete suppression of the critical supercurrent via electrostatic gating. Probing both in-and out-of-plane magnetic field responses in the presence of electrostatic gating can unveil the mechanisms that primarily cause the superconducting electric field effects. Remarkably, we find that a magnetic field, independently of its orientation, has only a weak influence on the critical electric field that identifies the transition from the superconducting state to a phase with vanishing critical supercurrent. This observation points to the absence of a direct coupling between the electric field and the amplitude of the superconducting order parameter or 2π-phase slips via vortex generation. The magnetic field effect observed in the presence of electrostatic gating is described within a microscopic model where a spatially uniform interband π phase is stabilized by the electric field. Such an intrinsic superconducting phase rearrangement can account for the suppression of the supercurrent, as well as for the weak dependence of the critical magnetic fields on the electric field.

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Section: Introductionmentioning

confidence: 99%

Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Bours

Mercaldo

Cuoco

et al. 2020

Phys. Rev. Research

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“…The device shows a normal state resistance

, a switching current at 2 K of

mA, and a critical temperature

K [ 31 ].…”

Section: Gate-driven Supercurrent Suppression In Nb and V Nanojuncmentioning

confidence: 99%

“…The bias current for this experiment was chosen to be

μA to have a sharp super-to-normal transition and a linear dependence between R and

. The continuous variation in the gate voltage provides continuous variation in junction resistance accordingly with the

curves [ 31 ]. Due to the former behavior, the system is in the non-dissipative state for

and a voltage-drop across the DB arises when the condition

is satisfied.…”

Section: Gate-driven Supercurrent Suppression In Nb and V Nanojuncmentioning

confidence: 99%

“…The dependence of

[ 2 , 3 , 4 , 5 , 6 , 9 , 23 , 26 , 31 ] on the gate voltage is shown to acquire the

vs.

characteristics as a function of bath temperature. Figure 6 b shows that the supercurrent vanishes for

V and that such a value appears to be independent from the bath temperature.…”

Section: Nonthermal Origin Of Supercurrent Suppression In Gated Almentioning

confidence: 99%

“…Figure 3a displays the pseudo-color SEM of a representative vanadium-gated device. The device shows a normal state resistance R N 106 Ω, a switching current at 2 K of I S = 1.42 mA, and a critical temperature T C 3.6 K [31].…”

Section: Vanadium Gate-controlled Transistormentioning

confidence: 99%

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Gate Control of Superconductivity in Mesoscopic All-Metallic Devices

Puglia

Simoni²,

Giazotto³

2021

Materials

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The possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen–Cooper–Schrieffer metals was recently demonstrated. Despite the extensive experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such an unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results, which provide information regarding a possible thermal origin of the effect: first, we review experiments performed on high-critical-temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools, such as a half-wave rectifier. Second, we discuss the origin of the gating effect by showing gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate employing finite element simulations and compare the results with experimental data. In our view, the presented data provide a strong indication regarding the unlikelihood of the thermal origin of the gating effect.

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Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

Koch,

Cirillo,

Battisti

et al. 2024

Nano Res.

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The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for the GCS effect must be identified. Top-down fabrication protocols should also be optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show a GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor niobium rhenium with varying ratios of the constituents (NbRe). Unlike other devices previously reported and made with a top-down approach, our NbRe devices systematically exhibit a GCS effect when they were fabricated from NbRe thin films with small grain size and etched in specific conditions. These observations pave the way for the realization of top-down-made GCS devices with high scalability. Our results also imply that physical parameters like structural disorder and surface physical properties of the nanobridges, which can be in turn modified by the fabrication process, are crucial for a GCS observation, providing therefore also important insights into the physics underlying the GCS effect.

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Vanadium gate-controlled Josephson half-wave nanorectifier

Cited by 27 publications

References 41 publications

Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Unveiling mechanisms of electric field effects on superconductors by a magnetic field response

Gate Control of Superconductivity in Mesoscopic All-Metallic Devices

Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

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