This brief presents an ultra-low voltage splitdata-aware 10T and 8T (SDA-10T-8T) embedded static random access memory (SRAM) design for MPEG-4 video processors. Without additional complex peripheral circuits, the proposed design enables a reliable operation at 0.36 V under process variation and aging effect. The experimental results based on 45-nm CMOS technology show that, as compared to conventional SRAM design, our proposed design can achieve a 95% reduction in active power, with no significant degradation in frame quality. In addition, the proposed design suppresses the leakage current effectively, thereby reducing the leakage induced bitline voltage drop rate from 1.54 mV/ns to 0.64 mV/ns at V dd = 0.36 V.Index Terms-Embedded, MPEG-4, negative bias temperature instability (NBTI), process variation, static random access memory (SRAM), ultra-low voltage.
PurposeThe paper's purpose is to analyze the concepts of potential and actual infinities.Design/methodology/approachThe exploration and research on potential and actual infinities generally touch on many disciplines, such as philosophy, logic, computer science, mathematics, etc. From the angle of a brief history, recall and development, the authors analyze the concepts of potential and actual infinities on one starting point and two locations to cut in.FindingsClarify the difference and connection of these two infinities on the level of mathematics and introduce the symbolized, descriptive definitions for potential and actual infinities.Originality/valueIt is the first time that the difference between the concepts of potential and actual infinities are clarified, which leads to the discovery of the fourth crisis in the foundations of mathematics.
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