It has been experimentally verified that 650 V breakdown voltage can be realized in lateral devices on a 14 um thick SOI. The device structure is characterized by a shallow N type diffusion layer on a 3 ,urn thick bottom oxide film.Trenches will be available for device isolation by using a thin SO1 film for a power IC. The combination of high voltage thin SO1 device structures and the trench isolation technique will make VLSIs with high-voltage output devices possible.
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