No abstract

No abstract

No abstract

High breakdown voltage AlGaN-GaN power highelectron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 m cm 2 for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.Index Terms-GaN, high-voltage device, power semiconductor device.

AlGaN/GaN power high electron mobility transistors (HEMTs) with a breakdown voltage of 600 V are fabricated and demonstrated as switching power devices for motor drive and power supply applications. A high breakdown voltage was realized in the fabricated power-HEMT by the field plate technique and an ultra low on-state resistance of 3.3 mΩ·cm2, which is 20 times lower than the silicon limit, due to the high critical field of the GaN material and the high mobility in a two-dimensional electron gas channel. A device with the double-field plate structure was also designed using two-dimensional device simulation to increase the breakdown voltage without any increase of the GaN layer thickness.