The orientation and microstructure of (Ba, Sr)TiO3 (BST) deposited via physical vapor deposition at 480 °C was studied using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. Annealing Pt/BST (previously annealed at 400 °C) at 800 °C in O2 results in grain growth, enhancement of the {100} texture and a 20% increase in the dielectric constant. The 400 °C annealed films become more textured in the {100} orientation as film thickness is increased. Finally, it appears that an interfacial capacitance, rather than the “bulk” dielectric constant limits the total capacitance density of the films.
The process stability of Pb(Zr, Ti)O3 (PZT) sputtering was
studied by observing film composition change as a function of the
process duration ( e.g. integrating sputtering time). A useful
method of controlling compositional stability was developed. It
was found that the existence of a potentially grounded anode was
effective to prevent the large variation of Pb contents in PZT thin
films and improve the process stability of PZT sputtering.
(Pb, La)(Zr, Ti)O3 (PLZT) thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by rf magnetron sputtering using a multichamber production system. The Pb content in PLZT films deposited at low temperature was measured by inductively coupled plasma (ICP) spectroscopy, and the structural properties of crystallized PLZT films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). A novel method for Pb content control was developed and it was found that Pb content in PLZT film could be changed by changing the electric potential of the substrate. For ferroelectric properties, only small differences were observed between the rapid thermally annealed PLZT film and furnace- annealed ones. Good uniformities of film thickness, Pb content and remanent polarization were achieved on 6-inch wafers.
A new perpendicular magnetic film has been developed by an evaporation method using room temperature substrates. The film is obtained by partially oxidating the Co film with the oxygen gas introduced during deposition. The film structure is a mixture of very fine Co grains and CoO phase. The obtained films have such superior perpendicular magnetic properties as H
c⊥=1100 Oe, H
k=5.5 kOe and 4πM
s=6000 G at Co–45 at%O film composition.
The magentic properties of CoCrPtBICr media were investigated to find the optimum compositions with high coercivity. It is found that the maximum coercivity of CoCrPtBICr media can be achieved by adding the same amount of Pt and B content while keeping Cr content fixed at loat.%. A very high coercivity of 3200 Oe was obtained in a Coloat.%Cr-10at.&Pt-lOat.%B/Cr film. The addition of B is also found to be effective in reducing the noise level of CoCrPt/Cr media.
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