Preparation of (Pb, La)(Zr, Ti)O₃ Ferroelectric Films by RF Sputtering on Large Substrate

Abstract

(Pb, La)(Zr, Ti)O3 (PLZT) thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by rf magnetron sputtering using a multichamber production system. The Pb content in PLZT films deposited at low temperature was measured by inductively coupled plasma (ICP) spectroscopy, and the structural properties of crystallized PLZT films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). A novel method for Pb content control was developed and it was found that Pb content in PLZT film could be changed by changing the electric potential of the substrate. For ferroelectric properties, only small differences were observed between the rapid thermally annealed PLZT film and furnace- annealed ones. Good uniformities of film thickness, Pb content and remanent polarization were achieved on 6-inch wafers.

Wet etching of sol-gel deposited lead lanthanum zirconate titanate for photonic crystal applications

“…[1][2][3][4][5] Depending on whether the film is ferroelectric or not, PLZT displays linear (∆n i = -1/2 n 3 r ij E j , Pockels effect) or quadratic (∆n i = -1/2 n 3 r ijk E j E k , Kerr effect) change in refractive index ∆n i when upon application of a transverse bias field E ij , with the magnitude determined by its electrooptic coefficient r ijk . PLZT of certain compositions such as PLZT 8/65/35 (x/y/1-y) exhibit high values of r ijk and good transparency on the operating wavelength, making them good candidates for intergrated electrooptic switches with low power consumption.…”

“…6 Thus, for the successful introduction of PLZT as the active material in electrooptical devices, methods of reducing propagation loss must be utilized. One possibility is the epitaxial growth of PLZT on compatible substrates using techniques such as sputtering 3 and spin coating of sol-gel precursors followed by sintering. [7][8] Another technique may involve the reduction of PLZT feature size to minimize total propagation loss.…”

Preparation of PZT Thin Films by Liquid-Source MOCVD Using of Cyclohexane Solvent

“…Ferroelectric random access memories (FRAM or FeRAM) have attracted high attention from the industry for its high-speed and low-voltage operation, compared with other non-volatile memories, such as electrically erasable programmable read-only memories (EEPROM) and flash memories [1][2][3][4]. High-density FRAM devices are required to achieve three-dimensional structure and thinner film [5][6][7].…”

“…PZT are growth on 8 inch-Ir(111)/SiO 2 /Si substrate at 580 • C. As a precursor, Pb(thd) 2 , Zr(dmhd) 4 and Ti(iPrO) 2 (thd) 2 are used. THF or cyclohexane is used as solvent.…”

Investigation of oxygen source from vapor phase and target for growth of Pb(Zr,Ti)O3 thin film

“…Each of these fabrication procedures has advantages and disadvantages, and optimization has been attempted for them. The sputtering process is widely used, since it has advantages in the control of film composition, the possibility of high growth rates, uniformity on a large-diameter substrate, and stability of the process, and has fewer constraints regarding the raw material [9,10].…”