ARSTKACTCarhori based layers such LIS silicon carbide (SIC) and diamond -like curlwn (DL,C) layers wc'r-e ~h f~i i n e~I hy CVII methods. The properties OJ' these 1qer.s were inve.stignte~1 in o d e r to e.stubli.sh the optinium ,rirepurution coritlitions j i l r d(jferent inicro,systenis cippli~~~iti~ins, So, silicori iriembrunes nsing aSic or D1.C layers u s etchblg mas/<, us well a s silicon curbitle ~~z~i n h r~i t i~.~ using LZ coinhivied porous silicon -11 LC .structure were ,j2ibriccifecl ,fiir sensor upplicutions. A detuiled evaluation of the ,field emissiorz (FEJ properties qf' these fihiiLs was done lo denwnstrafe their CcipUbilitY to be LisPd inji'elrl enti,s,sion devices.
INTHODUCTIONThe aim of' this paper is to evaluate the properties ancl the applications of carbon layers such as silicon carbide and diamond-like carbon thin filius obtained by different chetnical vapour deposition (CVD) methods. Generally, such films are used as coatings or as inask in ctching and diffiisioii processes. Recently, the field emission from different carbon films was intensively studied. In the m o s t of thc cases, thc field emission is tluc to the field enhancciiient by film morphology and structure.
EXPERLMENTALa-Sic films on silicon substrates were prepared using liquid hexamcthyldisilane precursor by LPCVD (deposition temperature was varicd between 720-9S0°C, precursor flow rate was 5-8 sccin and the total pressure was kept constant :it 0.5 torr). Polycrystallinc S i c films on porous silicon substrates were prepared by PECVL) method (T=800"C; t,~,,,= Ill; P=200 W; D,,,.,,,,,,,,, =0.8 inl/h; H?=2-3 limin; P,=2-2,5The DLC laycrs on scratched silicon or on porous silicon substrates wcrc obtainccl hy PECVI) method from mcth;inc o r nietlianol precursor at the following working pii-;iiiic =0.0 I5 I/min, H2=6-13 I/min, 1+30 Torr.