2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
DOI: 10.1109/smicnd.2000.889126
|View full text |Cite
|
Sign up to set email alerts
|

Technology for field emission pressure sensors

Abstract: The technological process jur the fabrication oj U novel ,field emission pressure sensor is presented. The silicon mnicropsoccssed device integrates afield emission microtriode a m y and ~i membrum anode. The scnsor works in a diilrcntial inodc and is intended fos lowpse.ssiise mcasurenscnt,s.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 1 publication
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?