A modified Bridgman method for growing cadmium telluride is described. This method controls the composition of the melt, and thus the solid, by controlling the pressure of one of the components of cadmium telluride (CdTe) over the melt. The theory of equilibrium between solid-liquid-gas for this system indicates that the liquid acts only as a transferring medium between gas and solid. Thus the system may be treated as a gas-solid system with respect to defect chemistry. The synthesis and purification of CdTe is described in detail, and empirical results for producing large single crystals are given. Crystals grown by this system are compared with the defect chemistry presented by de Nobel. D. de Nobel (1) has shown that cadmium telluride (CdTe) can undergo stoichiometric deviations, and that such changes in composition are caused mainly by lattice defects which determine the conductivity Key words: crystal growth, cadmium telluride, semi-insulating cadmium telluride, II-VI compound, radiation detector material, modified Bridgman crystal growth, optical modulator material. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-02-08 to IP Vol. 118, No. 11 GROWTH OF SEMI-INSULATING CdTe 1791 I_ m L. A9 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-02-08 to IP * Electrochemical Society Active Member.cedures distinction can be made between the properties of weak spots in the insulator and those of the bulk (1). We have observed electrical switching in zirconia films, grown by thermal and anodic means on zirconium and a number of its alloys. Areas of impurity and intermetallic precipitates have been identified as ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-02-08 to IP
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