A thermal annealing procedure for the reduction of 10.6 μm optical losses in CdTe

Gentile, A. L.; Kiefer, James E.; Kyle, N. R.; Winston, Harvey

doi:10.1016/0025-5408(73)90128-1

Cited by 16 publications

(3 citation statements)

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“…Self-compensation has been extensively employed to obtain CdTe samples with carrier concentrations low enough to give the high electrical resistivity needed for y-ray detectors and the high optical transmission needed for electrooptic modulators and infrared windows. Gentile et al [71] ] have described a technique for preparing highly transparent samples by annealing material doped with about 2 x 1017 cm -3 In over a temperature range down to 700 OC at Te, pressures somewhat lower than the saturation pressure.…”

Section: Fig 4 -Electrical Resistance Of Cdte Vs Increasing Andmentioning

confidence: 99%

The physical properties of cadmium telluride

Strauss

1977

Rev. Phys. Appl. (Paris)

105

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Section: Fig 4 -Electrical Resistance Of Cdte Vs Increasing Andmentioning

confidence: 99%

The physical properties of cadmium telluride

Strauss

1977

Rev. Phys. Appl. (Paris)

105

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“…Also with the advent of single crystal CdTe, many of the optical properties have been much improved and single crystal windows are now commercially available [18]. More recently CdTe has been discussed as a material for very high power CO2 laser windows [19] and it indeed has potential in this area, although its low thermal conductivity as well as low mechanical strength make it imperative that it be prepared with extremely low absorption at 10.6 u. An in-depth review of the problems and tradeoffs in the very high power laser window field has recently been published by Deutsch [20].…”

Section: Infrared Windows -Irtran 6(r) Made Bymentioning

confidence: 99%

Applications of CdTe. A review

Wald¹

1977

Rev. Phys. Appl. (Paris)

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The review considers the history of CdTe in short form and delineates the applications potential for the compound. This potential is seen to arise on the one hand from a combination of various physical properties which is useful for several classes of electronic and particularly optoelectronic devices, and on the other hand from the fact that thin film fabrication and low cost starting materials could give it significant cost advantages over other semiconductors. The obvious lack of widespread application is traced to three fundamental problems : 1) Lack of control over minority carrier behavior ; 2) Erratic and non reproducible performance of thin films ; 3) Lack of good contacts to low resistivity p-type material. Some suggestions on further work in these areas are also advanced

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“…Postgrowth annealing cycles under well-defined component partial pressures can further influence the properties through their effect on the nature and concentration of the native defects and precipitates. Doping of CdTe with donor impurities (such as In) combined with postgrowth annealing under Cd partial pressures below a certain critical value, has been used as a means to reduce the concentration of free carriers substantially and thus produce high resistivity material with low infrared absorption at 10.6 ~m (2,3). The use of acceptors such as P in obtaining high resistivity CdTe has, however, received considerably less attention.…”

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confidence: 99%

A Study of Annealing‐Induced Lattice Defects in P‐Doped CdTe by Transmission Electron Microscopy

Narayanan

Rustomji

1979

J. Electrochem. Soc.

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Lattice defects in P-doped CdTe single crystals grown from melt by horizontal Bridgman technique have been investigated by transmission electron microscopy following various postgrowth annealing treatments at 700°C under well-defined Cd partial pressures for different levels of P-doping. The major defect in the as-grown crystals was a dispersion of fine precipitates of a second phase the volume fraction of which was found to decrease with decreasing P content of the crystal. This phase has been tentatively identified as Cd3P2.Crystals annealed at very low Cd partial pressures (viz., 2.4 × 10 -5 and 2 × 10 -3 atm), on the other hand, revealed the presence of microvoids that were partially filled with a precipitate phase at all P-doping levels. The size and density of the voids decreased as PCd was increased. For a given PCd, higher density of voids were observed in crystals with higher P content. In contrast to this, crystals annealed at higher Pod's in general showed the presence of a finely distributed second phase precipitate and no voids, while those annealed at intermediate PCd'S contained neither types of lattice defects. The PCd and P concentration dependences of the observed lattice defects have been analyzed in the light of previously published defect models for CdTe:P system. The formation of the partially filled voids observed at low PCd'S has been attributed to the condensation of Cd vacancies (VCd) which is in excess of Te vacancies (Vre) while the precipitates observed at high Pod's have been identified as those due to clustering of P or Cd interstitials.

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A thermal annealing procedure for the reduction of 10.6 μm optical losses in CdTe

Cited by 16 publications

References 1 publication

The physical properties of cadmium telluride

The physical properties of cadmium telluride

Applications of CdTe. A review

A Study of Annealing‐Induced Lattice Defects in P‐Doped CdTe by Transmission Electron Microscopy

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