Germanium-Doped Gallium Arsenide Tunnel Diodes

Solomon, R.; Newman, R.C.; Kyle, N. R.

doi:10.1149/1.2428198

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Monsanto Company Saint Louis Missouri1

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1965

1971

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Cited by 12 publications

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“…The amphoteric nature of the group IV elements as impurities in the III-V compounds has been fairly well documented. Germanium and silicon in gallium arsenide (1)(2)(3)(4)(5) and tin in gallium phosphide (6) have been studied in detail. As expected, the group IV element may substitute on either a group III lattice site or a group V lattice site and behave as a donor or an acceptor, respectively.…”

Section: Monsanto Company Saint Louis Missourimentioning

confidence: 99%