Основные энергосиловые параметры процесса равноканального многоуглового прессования (РКМУП), геометрические характеристики течения вязкого аморфного материала в двухповоротном штампе, а также динамика формирования макроротора определены на основе численного конечноразностного решения уравнения переноса вихря для плоского течения вязкой несжимаемой сплошной среды. Результаты расчетов хорошо согласуются с данными экспериментов в рамках физического моделирования. Ключевые слова: равноканальное многоугловое прессование, уравнение переноса вихря, макроскопическая ротация, пластилин, исходные кольцевые сетки. Key energy-power parameters of an Equal Channel Multiple-Angle Extrusion process, theoretical material flow patterns through a 2-turn rectangular die and dynamics of macroscopic rotation formation in amorphous materials have been determined with a numerical finite-difference solution of the curl transfer equation for planar flow of viscous incompressible continua. Good agreement between theoretical and averaged experimental results was found within the scope of physical simulation.

Structure changes around an impress of indenter on GaAs single crystals were investigated. Samples in the shape of rectangular parallelepipeds with the sizes 3 2.4 3.1 3.2 mm × × conterminous correspondingly to the crystallographic directions 01 1     , [ ] 011 and [ ] 100 were used. The impresses were being put on side surfaces (01 1) and (0 11) with loads on indenter 0.20 N. Then the sample was subjected to pressing along the direction [ ] 100 (the greatest dimension) up to the stress 83 MPa σ = and was being maintained under the loading during 120 h at 300 K T =. After the removal of the loading two types of dislocations were revealed by chemical discriminating etching near the indenter impress. They were the prismatic loops, which have issued from the stress concentration area in the process of creeping, and dislocations sliding along the planes {111}. Running off of dislocations along the cleavage planes as a result of splitting off of the chip was observed.