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a b s t r a c tCd 1Àx Mn x Te (x ¼ 0.1, 0.2 and 0.3) have been studies. Structural characterization was carried out by X-ray diffraction. The Rietveld program reveals the formation of nano disordered structure. The lattice parameters were found to decrease by the increasing of Mn content.The dc and Ac conductivities of the prepared semimagnetic semiconductor, were measured in a wide range of temperature and frequency. The obtained data reveal that s Ac (u) obey the relation, s Ac (u) ¼ Au S . The Ac conductivity shows frequency dependent and nearly temperature independent character. The correlated barrier hopping conduction mechanism is applied and single electron hopping between D þ center (Mn þ ) and D 0 (chalcogen atom) is assumed to take place. The magnetic susceptibility was investigated in the temperature range of (170e300) K revealing the paramagnetic behavior described by the CurieeWeiss low.

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