Physical characterization of amorphous GeSe2 films

Wahab, L.A.; Adam, Abdullahi Abbas; Balboul, M.R.; Makram, N.; El-Ela, A.A.; Sedeek, K.

doi:10.1016/j.physb.2006.03.097

Cited by 7 publications

(4 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…GeSe glasses are important chalcogenide semiconductors, with numerous promising applications [7][8][9]. Research on GeSe glass has been carried out for decades, to determine rigidity percolation, glass transition and the short and intermediate range order of the structure [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…Research on GeSe glass has been carried out for decades, to determine rigidity percolation, glass transition and the short and intermediate range order of the structure [10][11][12]. Wahab et al [8] investigated the AC conduction mechanism and photodarkening phenomenon of amorphous Ge 30 Se 70 films prepared by thermal evaporation, and Sleekx et al [13] reported thermalinduced bleaching in amorphous Ge 30 Se 70 films prepared by plasma-enhanced chemical vapour deposition.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dependence of optical properties on the thickness of amorphous Ge₃₀Se₇₀ thin films

Solieman

Hafiz

Abu-Sehly

et al. 2014

Journal of Taibah University for Science

View full text Add to dashboard Cite

In order to calculate the optical properties of evaporated Ge 30 Se 70 thin films and their relation to thickness, amorphous Ge 30 Se 70 thin films of different thicknesses were deposited by thermal evaporation at a base pressure of 7.5 × 10 −6 Torr at room temperature. The optical transmission and reflection spectra of all films were measured in the wavelength range of 0.2-2.5 m. Efficient parameterization of the spectral dependence of the optical constants of amorphous Ge-Se thin films was obtained by applying a suitable dielectric function model. The O'Leary, Johnson and Lim (OJL) model, based on joint density of states functions, was used to analyze the optical spectra. The best fit was obtained by configuring the film as two layers, the top layer consisting of bulk Ge 30 Se 70 material embedded in air medium containing different volumes of voids. Therefore, the OJL model coupled with the Bruggeman effective-medium approximation model were used to determine the optical constants of the Ge 30 Se 70 thin films. The photon energy dependence of the dielectric function, ε = ε r − iε i of the investigated films is presented. The film thickness, absorption coefficient α, refractive index n, extinction coefficient k, static refractive index n(0) and optical band gap Eg were deduced. We found that increasing the film thickness increased the direct optical energy gap and decreased the refractive index.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dependence of optical properties on the thickness of amorphous Ge₃₀Se₇₀ thin films

Solieman

Hafiz

Abu-Sehly

et al. 2014

Journal of Taibah University for Science

View full text Add to dashboard Cite

show abstract

“…6 In the past decades, a large number of studies including steady-state photoconductivity, photoinduced crystallization and thermal-induced crystallization based on the amorphous chalcogenides germanium selenides system have been reported. [7][8][9][10] Recently Zhang et al have reported the synthesis and the field emission properties of singlecrystalline, low dimensional GeSe 2 nanowalls. 11 In this report, we have synthesized and characterized single-crystalline GeSe 2 nanobelts (NBs) and demonstrate the superior photoconductivity properties of individual GeSe 2 NBs for the first time.…”

Section: Introductionmentioning

confidence: 99%

Stepped-surfaced GeSe2 nanobelts with high-gain photoconductivity

et al. 2012

View full text Add to dashboard Cite

“…Chalcogenides based Ge-Selenides have significant infrared (IR) transparency in the wavelength region between ~1 and 12µm which makes them suitable for passive IR optics, for example as optical fibers, wave guides, sensors, nano-lens and photo-resist materials for the micro and nano fabrication [1][2][3][4][5][6]. Various works have been reported on the Ge-Se system chemically modified by addition of I-VII group elements of the periodic table [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

First Investigation of Optical Properties and Local Structure of Gd3+ Doped Nano-Crystalline GeSe2

Hantour¹

2016

AJOP

View full text Add to dashboard Cite

Pure and Gd-doped nano-crystalline GeSe 2 were prepared by the melt-quenching technique. The crystal structure, local structure and emission properties are investigated. Structure analysis using Rietveld program suggests monoclinic structure for both virgin and doped samples with nano-particle size 41nm for GeSe 2 and 48nm for Gd-doped sample. A wide optical band gap as estimated from absorbance measurements is 4.1ev and 4.8ev for pure and doped samples in accordance with the confinement effects. Raman spectra show two unresolved components at ~ 202 cm-1 with broad line width. Also, well identified low intensity (ʋ < 145 cm-1) and high intensity (ʋ > 250 cm-1) bands are detected. For Gd-doped sample, the main band is shifted to lower energies and its FWHM is reduced by ~ 50% accompanied by an intensity increase of about ~ 17 fold times. The photoluminescence analysis of the pure sample shows a main emission band at ~ 604 nm. This band is splitted into two separated bands with higher intensity. The detected emission bands at wavelength > 650 nm are assigned to transmission from 6 G J to the different 6 P J terms.

show abstract

Physical characterization of amorphous GeSe2 films

Cited by 7 publications

References 21 publications

Dependence of optical properties on the thickness of amorphous Ge₃₀Se₇₀ thin films

Dependence of optical properties on the thickness of amorphous Ge₃₀Se₇₀ thin films

Stepped-surfaced GeSe2 nanobelts with high-gain photoconductivity

First Investigation of Optical Properties and Local Structure of <br/>Gd<sup>3+</sup> Doped Nano-Crystalline GeSe<sub>2</sub>

Contact Info

Product

Resources

About

Physical characterization of amorphous GeSe2 films

Cited by 7 publications

References 21 publications

Dependence of optical properties on the thickness of amorphous Ge30Se70 thin films

Dependence of optical properties on the thickness of amorphous Ge30Se70 thin films

Stepped-surfaced GeSe2 nanobelts with high-gain photoconductivity

First Investigation of Optical Properties and Local Structure of &lt;br/&gt;Gd&lt;sup&gt;3+&lt;/sup&gt; Doped Nano-Crystalline GeSe&lt;sub&gt;2&lt;/sub&gt;

Contact Info

Product

Resources

About

Dependence of optical properties on the thickness of amorphous Ge₃₀Se₇₀ thin films

Dependence of optical properties on the thickness of amorphous Ge₃₀Se₇₀ thin films

First Investigation of Optical Properties and Local Structure of <br/>Gd<sup>3+</sup> Doped Nano-Crystalline GeSe<sub>2</sub>