Silicon photonics is advancing rapidly in performance and capability with multiple fabrication facilities and foundries having advanced passive and active devices, including modulators, photodetectors, and lasers. Integration of photonics with electronics has been key to increasing the speed and aggregate bandwidth of silicon photonics based assemblies, with multiple approaches to achieving transceivers with capacities of 1.6 Tbps and higher. Progress in electronics has been rapid as well, with state-of-the-art chips including switches having many tens of billions of transistors. However, the electronic system performance is often limited by the input/output (I/O) and the power required to drive connections at a speed of tens of Gbps. Fortunately, the convergence of progress in silicon photonics and electronics means that co-packaged silicon photonics and electronics enable the continued progress of both fields and propel further innovation in both.

A large number of novel devices have been recently demonstrated using wafer fusion to integrate materials with different lattice constants. In many cases, devices created using this technique have shown dramatic improvements over those which maintain a single lattice constant. We present device results and characterizations of the fused interface between several groups of materials.

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Scaling of the threshold current density in apertured vertical cavity lasers is limited by scattering losses, current spreading, and carrier diffusion. We consider the contributions of all three effects, but focus on current spreading. We analyze a vertical cavity laser (VCL) with low scattering losses so the scaling of the threshold current density is dominated by current spreading under the aperture. We show that a simple analytic estimate (appropriate for circular geometry) for the increase in threshold matches experimental data extremely well without any fitting parameters. One can also conveniently apply the estimate of current spreading to VCLs with double apertures or multiple layers of different resistivities. We also show that current spreading should only negligibly reduce the differential efficiency as implied by experiment.