Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers

Babic, D.I.; Streubel, K.; Mirin, Richard P.; Margalit, N.M.; Bowers, John E.; Hu, Evelyn L.; Mars, D. E.; Yang, Ligang; Carey, K. W.

doi:10.1109/68.473453

Cited by 162 publications

(29 citation statements)

References 7 publications

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“…INCE the first CW room-temperature operating devices were fabricated [1], long-wavelength vertical-cavity lasers (VCL's) have gained considerable interest. As a potential next-generation light source for future optical communication systems, they offer a variety of advantages such as costeffective fabrication, on-chip-testability, array fabrication, and effective fiber coupling.…”

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confidence: 99%

“…We analyze the pulsed output characteristics of 1.54-m VCL's, based on an InP-GaInAsP integrated bottom mirror. This design offers full-wafer-scale fabrication, in contrast to the successfully operating wafer fused devices [1], [8]. Lasers with a varying offset between cavity mode and PL are fabricated and the threshold current for different temperatures is recorded.…”

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confidence: 99%

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Temperature sensitivity of 1.54-μm vertical-cavity lasers with an InP-based Bragg reflector

Rapp

Piprek

Streubel

et al. 1997

IEEE J. Quantum Electron.

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Abstract-We fabricated 1.54-m laser diodes that employ one integrated GaInAsP-InP and one Si-SiO 2 mirror in combination with a strain-compensated GaInAsP multiquantum-well active layer. Considerable care has to be taken of the temperature performance of the devices. Here, an important parameter is the gain offset between the gain peak wavelength and the cavity resonance. This offset is related to the experimentally accessible photoluminescence (PL) offset between the PL-peak wavelength and the emission wavelength. Vertical-cavity laser (VCL) characteristics such as threshold current and quantum efficiency show an extremely sensitive dependence on this parameter. In this paper, we focus on the temperature performance of our VCL's as a function of the cavity tuning. VCL's designed for PL-offset values between +17 and 016 nm are fabricated and characterized. As expected, the threshold current of all lasers shows a pronounced minimum at low temperatures. The position of this minimum depends on the offset at room temperature (RT) as a parameter. However, it turns out that the minimum threshold current is not obtained by matching gain peak and cavity wavelength for that temperature. The observed behavior is described well by calculations, taking into account the temperature dependence of the optical gain, of the cavity resonance, and of the cavity losses. The model is a valuable tool to tune the lasers for example low threshold current or reduced temperature sensitivity.

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Temperature sensitivity of 1.54-μm vertical-cavity lasers with an InP-based Bragg reflector

Rapp

Piprek

Streubel

et al. 1997

IEEE J. Quantum Electron.

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“…Each section of a device can be optimized using the material best suited for its function. Examples are long wavelength vertical cavity surface emitting lasers with InGaAsP active region and GaAs/AlAs mirrors [5,6], or high gain-bandwidth product avalanche photodetectors with InGaAs absorption layer and Si multiplication region [7]. In this paper we will describe use of wafer fusion to fabricate threedimensional photonic integrated circuits.…”

Section: Wafer Fusionmentioning

confidence: 99%

“…actual ridge waveguide, there is a large leakage current that can be reduced by etching mesas and depositing metal only on the FVC ridge regions. When wafer fusion technique is used to fabricate VCSELs and detectors [3,[5][6][7], those devices are relatively small and uniformity of the fused material is not so critical for individual device operation. To make long waveguide couplers and switches, on the other hand, requires a good uniformity of the fusion interface.…”

Section: Fused Vertical Switchmentioning

confidence: 99%

3D Photonic Integrated Circuits for WDM Applications

Shakouri¹,

Liu²,

Abraham³

et al. 1998

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The wafer fusion technique for realization of compact waveguide switches, filters and 3D photonic integrated circuits is investigated theoretically and experimentally. Calculations based on the beam propagation method show that very short vertical directional couplers with 40-220 µm coupling lengths and high extinction ratios from 20 to 32 dB can be realized. These extinction ratios can be further improved using a slight asymmetry in waveguide structure. The optical loss at the fused interface was investigated by comparison of the transmission loss in InGaAsP-based ridge-loaded waveguide structures with and without a fused layer near the core region. This reveals an excess loss of 1.1 dB/cm at 1.55 µm wavelength due to the fused interface. Fused straight vertical directional couplers have been fabricated and characterized. Waveguides separated by 0.6 µm gap layer exhibit a coupling length of 62 µm and a switching voltage of about 12 volts. Since GaAs and InP have different material dispersion at 1.55 µm wavelength, a combination of InP and GaAs couplers is used to demonstrate an inherent polarization independent and narrowband filter.

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“…The threshold current of this structure was 11mA. Wafer fusion has been developed by University of California Santa Barbara in 1995 (Babic et al, 1995). Chemical bonds are directly achieved between two materials without an intermediate layer at the heterointerface.…”

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confidence: 99%