Wafer fusion: materials issues and device results

Black, A.; Hawkins, Aaron R.; Margalit, N.M.; Babic, D.I.; Holmes, A. L.; Chang, Ying‐Lan; Ábrahám, Pierre; Bowers, John E.; Hu, Evelyn L.

doi:10.1109/2944.640648

Cited by 136 publications

(58 citation statements)

References 45 publications

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“…The technique of wafer fusion has been used to combine materials of very different lattice constants that could not be grown by heteroepitaxy [3,4]. Materials such as GaAs, InP and Si can be combined into a single device, without degrading the crystal quality away from the interfaces.…”

Section: Wafer Fusionmentioning

confidence: 99%

“…actual ridge waveguide, there is a large leakage current that can be reduced by etching mesas and depositing metal only on the FVC ridge regions. When wafer fusion technique is used to fabricate VCSELs and detectors [3,[5][6][7], those devices are relatively small and uniformity of the fused material is not so critical for individual device operation. To make long waveguide couplers and switches, on the other hand, requires a good uniformity of the fusion interface.…”

Section: Fused Vertical Switchmentioning

confidence: 99%

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3D Photonic Integrated Circuits for WDM Applications

Shakouri¹,

Liu²,

Abraham³

et al. 1998

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The wafer fusion technique for realization of compact waveguide switches, filters and 3D photonic integrated circuits is investigated theoretically and experimentally. Calculations based on the beam propagation method show that very short vertical directional couplers with 40-220 µm coupling lengths and high extinction ratios from 20 to 32 dB can be realized. These extinction ratios can be further improved using a slight asymmetry in waveguide structure. The optical loss at the fused interface was investigated by comparison of the transmission loss in InGaAsP-based ridge-loaded waveguide structures with and without a fused layer near the core region. This reveals an excess loss of 1.1 dB/cm at 1.55 µm wavelength due to the fused interface. Fused straight vertical directional couplers have been fabricated and characterized. Waveguides separated by 0.6 µm gap layer exhibit a coupling length of 62 µm and a switching voltage of about 12 volts. Since GaAs and InP have different material dispersion at 1.55 µm wavelength, a combination of InP and GaAs couplers is used to demonstrate an inherent polarization independent and narrowband filter.

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Section: Wafer Fusionmentioning

confidence: 99%

Section: Fused Vertical Switchmentioning

confidence: 99%

3D Photonic Integrated Circuits for WDM Applications

Shakouri¹,

Liu²,

Abraham³

et al. 1998

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“…© 2017 Author (s In recent years, significant breakthrough has been made in the field of silicon photonics, and various Si-based integrated photonic devices have been developed, making Si-based optical systems promising for future information processing and communications, especially in data center and supercomputing. [1][2][3][4] However, silicon is not an efficient light emitting material due to its indirect band gap. As a result, bonding III-V compound semiconductors to silicon-on-insulator (SOI) wafers has become a key technology to realize hybrid integrated light sources in silicon photonics.…”

mentioning

confidence: 99%

Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

et al. 2017

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Successful direct wafer bonding between InP and silicon-on-insulator (SOI) wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophilicity for both the InP and the Al2O3/SOI wafers after oxygen plasma surface activation. X-ray photoelectron spectroscopy is employed to characterize the bonding interface before and after the wafer bonding process. It is found that oxides are formed on the bonding interface during bonding, which helps ensure high quality hydrophilic bonding.

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“…The two undoped GaAs-Al Ga As distributed Bragg reflector (DBR) mirrors were wafer fused to a 1.3-m InP-InGaAsP active region consisting of three sets of 7-InAs P quantum wells (QW) situated at the central peaks of the standing wave pattern in a 5/2 cavity. Conditions for wafer fusion are reported elsewhere [3]. The bottom mirror had 25 periods giving a calculated bottom mirror reflectivity ( ) of 0.998.…”

Section: Device Structure and Experimental Setupmentioning

confidence: 99%

1.3 μm vertical cavity amplifier

Riou

Bjorlin²,

Keating³

et al.

Optical Fiber Communication Conference. Technical Digest Postconference Edition. Trends in Optics and Photonics Vol.37 (IEEE Ca

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Abstract-We demonstrate the first 1.3-m vertical-cavity optical amplifier. The amplifier was optically pumped and operated in reflection mode. Optimization of the top mirror reflectivity resulted in a 9.4-dB continuous wave fiber-to-fiber gain, a gain-bandwidth product of 220 GHz, and a saturation output power of 6.1 dBm, all at room temperature. By modulating the pump source, an extinction ratio of 27 dB in the output signal power was obtained.

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Wafer fusion: materials issues and device results

Cited by 136 publications

References 45 publications

3D Photonic Integrated Circuits for WDM Applications

3D Photonic Integrated Circuits for WDM Applications

Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

1.3 μm vertical cavity amplifier

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