Ni/C multilayers are prepared by pulsed laser deposition with different laser wavelengths. Specimens providing different interface constitutions are investigated in the initial state and after an annealing time of 20 min at temperatures between 50 and 400 °C. X‐ray reflectometry and X‐ray diffraction at grazing incidence of the radiation are applied for the characterization of the samples. An increase of the double layer thickness with increasing temperature is observed for all multilayer samples. Generally this process starts at temperatures between 100 and 250 °C, but the sample with graded interfaces remain stable up to higher temperatures than those with abrupt interfaces. After heating at 400 °C the initially almost amorphous nickel layers crystallize in a thermodynamically stable f.c.c. lattice structure. For the sample with abrupt interfaces intermixing of nickel and carbon during deposition leads to the formation of crystalline nickel carbide between 200 and 300 °C.
Interest in CdTe field effect transistors and multi-gated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence, it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with on-board signal processing based on CdTe devices. Although CdTe metal-semiconductor field effect transistors have only recently been fabricated, rapid improvement in device performance has been achieved. All the devices reported have been fabricated from CdTe:In epilayers grown by Photoassisted Molecular Beam Epitaxy. We report on devices having gold Schottky barrier with reverse breakdown voltages as high as 28.0 V and ideality factors near 1.7. These MESFETs exhibit good depleting mode action.
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