Recent progress in device-oriented II-VI research at the University of Wuerzburg

Abstract

Interest in CdTe field effect transistors and multi-gated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence, it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with on-board signal processing based on CdTe devices. Although CdTe metal-semiconductor field effect transistors have only recently been fabricated, rapid improvement in device performance has been achieved. All the devices reported have been fabricated from CdTe:In epilayers grown by Photoassisted Molecular Beam Epitaxy. We report on devices having gold Schottky barrier with reverse breakdown voltages as high as 28.0 V and ideality factors near 1.7. These MESFETs exhibit good depleting mode action.

Pulse Plated Cadmium Telluride Films and Their Characteristics

“…The unique properties of CdTe make it an ideal material for several applications: photovoltaic cells, nuclear detectors, high-performance electro-optic modulators and photorefractive devices. It can exhibit both n and p types of conductivity, which makes diode technology [1] and field effect transistors [2] possible, and it can exhibit a semiinsulating state as well [3]. CdTe-based semimagnets, like CdMnTe, display extremely exciting properties, which have not so far been completely exploited [4].…”