Thin film transistors (TFTs) using polycrystalline tin oxides (SnO–SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p-type operation with on/off current ratios of ∼102 and field-effect mobilities of 0.24 cm2 V−1 s−1. Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n-type operation. This result is explained by transformation to a local SnO2-like structure and finally to SnO2. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p- and n-channel TFTs.

High-performance and excellent-uniformity thin-film transistors (TFTs) having bottom-gate structures are fabricated using an amorphous indium-gallium-zinc-oxide (IGZO) film and an amorphous-silicon dioxide film as the channel layer and the gate insulator layer, respectively. All of the 94 TFTs fabricated with an area 1 cm 2 show almost identical transfer characteristics: the average saturation mobility is 14.6 cm 2 /(V-sec) with a small standard deviation of 0.11 cm 2 /(V-sec). A five-stage ring-oscillator composed of these TFTs operates at 410 kHz at an input voltage of 18 V. Pixel-driving circuits based on these TFTs are also fabricated with organic light-emitting diodes (OLED) which are monolithically integrated on the same substrate. It is demonstrated that light emission from the OLED cells can be switched and modulated by a 120-Hz ac signal input. Amorphous-IGZO-based TFTs are prominent candidates for building blocks of large-area OLED-display electronics.

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Five-stage ring oscillators (ROs) composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 µm were fabricated on a glass substrate. The a-IGZO layer was deposited by RF magnetron sputtering onto the unheated substrate. The RO operated at 410 kHz (the propagation delay of 0.24 µs/stage), when supplied with an external voltage of +18 V. This is the fastest integrated circuit based on oxide-semiconductor channel TFTs to date that operates faster than the ROs using conventional hydrogenated amorphous silicon TFTs and organic TFTs.

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Five-stage ring oscillators (ROs) composed of amorphous In-GaZn-O (a-IGZO) channel TFTs were fabricated at room temperature with no post-deposition annealing. We observed oscillation of ROs with a variety of channel lengths and channel widths. A RO with channel lengths of 10 µm operated at 21.5 kHz (propagation delay of 4.7 µs / stage), when the external voltage of +18 V was supplied. A circuit simulation reproduced the measured output characteristics of ROs qualitatively, and also the simulated propagation delays agreed with the measured ones approximately.