Simple Analytical Model of On Operation of Amorphous In–Ga–Zn–O Thin-Film Transistors

Abe, Katsumi; Kaji, N.; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

doi:10.1109/ted.2011.2160981

Cited by 56 publications

(25 citation statements)

References 40 publications

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“…In addition, in the subthreshold region, Ψ abv is larger than Ψ sub since the localized charges are neglected in (12). Similarly, in the above threshold region, Ψ sub is larger than Ψ abv since the free electrons are neglected in (11). In other words, the surface potential of the subthreshold region and the above-threshold region is dominated by the tail states and free carriers, respectively.…”

Section: Threshold Voltage Modelmentioning

confidence: 99%

“…Abe et al extracts V th by fitting the analytical bias-dependent field-effect mobility model, in which the field-effect mobility is reproduced by a power function of (V gs -V th ) with two parameters of α and β. 11 In Ref. 12, V th is defined as the V gs value at which the maximum of dµ inc /dV gs occurs, where µ inc is the incremental field-effect mobility.…”

Section: Introductionmentioning

confidence: 99%

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A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

Chen

Zhou

et al. 2016

AIP Advances

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In the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold region is approximated by another asymptotic equation only considering the free carriers. The intersection point between these two asymptotic equations represents the transition from the weak accumulation to the strong accumulation. Therefore, the gate voltage corresponding to the intersection point is defined as threshold voltage of AOS TFTs. As a result, an analytical expression for the threshold voltage is derived from this novel definition. It is shown that the threshold voltage achieved by the proposed physics-based model is agreeable with that extracted by the conventional linear extrapolation method. Furthermore, we find that the free charge per unit area in the channel starts increasing sharply from the threshold voltage point, where the concentration of the free carriers is a little larger than that of the localized carriers. The proposed model for the threshold voltage of AOS TFTs is not only physically meaningful but also mathematically convenient, so it is expected to be useful for characterizing and modeling AOS TFTs.

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Section: Threshold Voltage Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

Chen

Zhou

et al. 2016

AIP Advances

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“…The apparent mobility increase with (V d -V dsat ) is due to the channel length modulation (CLM) effect, which results in a slope of the output characteristics in the saturation region, more pronounced in devices with shorter channel length. With including the drain voltage dependence, the drain current expressions (16) and (18) for I d1 and I d2 are multiplied by the CLM factor…”

Section: Analytical Drain Current Modelmentioning

confidence: 99%

“…Recently, published papers have proposed technology computer-aided design (TCAD) device simulators to reproduce the measured current-voltage characteristics and to extract the subgap density of states. [12][13][14] Moreover, the device characteristics were modeled using empirical mobility functions based on exponential deep and tail states [15][16][17] and surface-potential based models were developed, in which free carriers, localized deep states and tail states were considered in an effective carrier density. 18 In this paper, we propose a simple analytical drain current model based on a Gaussian distribution of tail states near the conduction band found in amorphous semiconductors, [19][20][21] which is approximated by two exponential distributions.…”

Section: Introductionmentioning

confidence: 99%

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Tsormpatzoglou

Hastas

Choi

et al. 2013

Journal of Applied Physics

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A fully analytical surface-potential-based drain current model for amorphous InGaZnO (α-IGZO) thin film transistors (TFTs) has been developed based on a Gaussian distribution of subgap states, with the central energy fixed at the conduction band edge, which is approximated by two exponential distributions. This model includes both drift and diffusion components to describe the drain current in all regions of operation. Using an empirical mobility relationship that depends on both horizontal and vertical electric field, it is demonstrated that the model describes accurately the experimental transfer and output characteristics, making the model suitable for the design of circuits using α-IGZO TFTs.

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“…A variety of metals such as Al [9], In [10], and Au/Ti [11] have been used as source/drain electrodes for AOS TTFTs. Among them, Al is the most desirable electrode because of its extremely low resistivity, good adhesion, and weldability.…”

Section: Introductionmentioning

confidence: 99%

Effects of an Aluminum Contact on the Carrier Mobility and Threshold Voltage of Zinc Tin Oxide Transparent Thin Film Transistors

Ma¹

2014

Journal of Electrical Engineering and Technology

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-We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs).The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from AlO x , were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

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Simple Analytical Model of On Operation of Amorphous In–Ga–Zn–O Thin-Film Transistors

Cited by 56 publications

References 40 publications

A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Effects of an Aluminum Contact on the Carrier Mobility and Threshold Voltage of Zinc Tin Oxide Transparent Thin Film Transistors

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