The different distribution profiles of the concentration n = (Nd — Na) as a function of the GaAs film thickness were demonstrated. Conclusion about the necessity of deliberate doping was made because the homogeneous distribution was not predominant. Investigation of doping profiles in Sn and Te doped epitaxial GaAs and InxGa1–xAs films was also made. Distribution coefficients of these elements as a function of temperature, composition of the liquid phase, and substrate orientation were determined. It is found that n(111)B > >n(111)A for all temperatures and liquid phase compositions which were investigated.
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