Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2
p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.
We study field-effect transistors made of single- and double-walled carbon nanotube networks for applications as memory devices. The transfer characteristics of the transistors exhibit a reproducible hysteresis which enables their use as nano-sized memory cells with operations faster than 10 ms, endurance longer than 10(+4) cycles and charge retention of a few hours in air. We propose water enhanced charge trapping at the SiO(2)/air interface close to the nanotubes as the dominant mechanism for charge storage. We show that charge storage can be improved by limiting exposure of the device to air.
Terahertz technology has recently emerged as a highly sought-after and versatile scientific tool in many fields, including medical imaging, security screening, and wireless communication. However, scientific progress has been hindered by the lack of sources and detectors in this frequency range, thereby known as the terahertz gap. Here, we show that carbon nanotube quantum dots coupled to antennas are extremely sensitive, broad-band, terahertz quantum detectors with spectral resolution. Their response is due to photon-assisted single-electron tunneling and it is substantially enhanced by a novel radiation-induced nonequilibrium cooling of the electrons, causing a sharp height increase of the Coulomb oscillation peaks.
We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 105 operating cycles, with a current drive capability up to 10−6 A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.
The authors made an error in the Discussion section of this paper. "We estimate that the maximum electrical power that can be extracted from the device is about 2.5% of the laser power incident on the MoS 2 region between the electrodes. " should read: "We estimate that the maximum electrical power that can be extracted from the device is about 1.25% of the laser power incident on the MoS 2 region between the electrodes. "
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