Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Fontana, Márcio; Deppe, Tristan; Boyd, Anthony K.; Rinzan, Mohamed; Liu, Amy; Paranjape, Makarand; Barbara, Paola

doi:10.1038/srep01634

Cited by 459 publications

(458 citation statements)

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“…However, most previously reported Pd-contacted MoS2 devices exhibit n-type behavior with high contact resistance instead of p-type behavior, which is commonly ascribed to Fermi-level pinning at the MoS2 contact interface [6] [14]. A recent study has shown that limited hole injection can be observed in Pd-contacted MoS2 devices, but only in the limit of large gate fields when the SBs are sufficient thinned by the electrostatic fields [15]. On the other hand Pd-contacted WSe2 PFETs show high contact resistances and require surface charge transfer doping to thin the SBs and allow tunneling of holes at the contacts [2].…”

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confidence: 99%

MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts

et al. 2014

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Abstract-The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole

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confidence: 99%

MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts

et al. 2014

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“…22 Recently, Chuang et al proposed the use of substoichiometric molybdenum trioxide (MoO x , x < 3), a high work function metal, as an efficient hole injection layer sandwiched between Pd and TMDC monolayers. 20 However, such inorganic hole injection layers require complex high temperature evaporation and deposition techniques in high vacuum chambers.…”

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confidence: 99%

Graphene Oxide as a Promising Hole Injection Layer for MoS₂-Based Electronic Devices

et al. 2014

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M any two-dimensional (2D) materials exist in bulk form as stacks of bonded layers with weak van der Waals interlayer attraction. Thanks to their particular structure, they can be exfoliated into atomically thin monolayers that hold promise for next-generation flexible electronics and optoelectronics. 1,2 Graphene has received much attention in the past decade, 3 due in large part to exceptional electronic properties such as its ultrahigh carrier mobility. However, the absence of a band gap has limited the progress of graphene-based technologies. For example, graphene field-effect transistors (FETs) cannot be turned off effectively, and even though small band gaps have been successfully opened in graphene, 4À7 the development of devices operating at room temperature with a low stand-by power dissipation remains a challenge. 8 On the other hand, transition-metal dichalcogenides (TMDCs) are a class of directband gap semiconductors that are emerging as strong candidates in next-generation nanoelectronic devices. 8À12 In the monolayer form, their lack of dangling bonds, structural stability, and mobility values comparable to Si make them optimal as channel materials in FETs. 1 In particular, FETs based on single layer MoS 2 , which has a direct band gap of 1.8 eV 1,13 and mobility in the range 1À50 cm 2 V À1 s À1 at room temperature, 14À17 show low power dissipation, 8 efficient control over switching 9 and reduction of shortchannel effects. 18,19 However, in order to develop logic circuits based on TMDCs, it is necessary to fabricate both n-and p-type FETs. TMDC FETs based on a Schottky device architecture can transport either electrons (n-FET) or holes (p-FET) in the conducting channel, depending on whether the Schottky barrier height (SBH) is smaller relative to the conduction or the valence band, respectively. 20 While monolayer n-FETs have been widely reported, fabrication of p-FETs has been challenging. 20 This is due to the relative difficulty in designing MoS 2 /metal contacts * Address correspondence to tiziana.musso@aalto.fi. Our analysis shows that this is possible due to the high work function of GO and the relatively weak Fermi-level pinning at the MoS 2 /GO interfaces compared to traditional MoS 2 /metal systems (common metals are Ag, Al, Au, Ir, Pd, Pt). The combination of easy-to-fabricate and inexpensive GO with MoS 2 could be promising for the development of hybrid all-2D p-type electronic and optoelectronic devices on flexible substrates.

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“…Nanotubes, nanowires and nanobelts are important one-dimensional (1D) nanomaterials that are the foundation for nanoscience and nanotechnology [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Novel nanoscale optoelectronic devices are important applications of nanomaterials, particularly nanowires which can be scaled down to a single nanowire (NW) device [1][2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…Novel nanoscale optoelectronic devices are important applications of nanomaterials, particularly nanowires which can be scaled down to a single nanowire (NW) device [1][2][3][4][5][6][7][8][9][10][11][12]. Contact electrodes play an important role in improving performance of nanoscale devices [1][2].…”

Section: Introductionmentioning

confidence: 99%

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Role of Contact and Contact Modification on Photo-response in a Charge Transfer Complex Single Nanowire Device

Basori

Raychaudhuri

2014

Nano-Micro Lett.

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Abstract:We investigated the feasibility of obtaining large photoresponse in metal-semiconductor-metal (MSM) type single nanowire device where one contact can be blocking type. We showed that suitable modification of the blocking contact by deposition of a capping metal using focused electron beam (FEB) can lead to considerable enhancement of the photoresponse. The work was done in a single Cu:TCNQ nanowire device fabricated by direct growth of nanowires (NW) from pre-patterned Cu electrode which makes the contact ohmic with the other contact made from Au. Analysis of the data shows that the large photoresponse of the devices arises predominantly due to reduction of the barriers at the Au/NW blocking contact on illumination. This is caused by the diffusion of the photo generated carriers from the nanowires to the contact region. When the barrier height is further reduced by treating the contact with FEB deposited Pt, this results in a large enhancement in the device photoresponse.

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Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Cited by 459 publications

References 26 publications

MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts

MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts

Graphene Oxide as a Promising Hole Injection Layer for MoS₂-Based Electronic Devices

Role of Contact and Contact Modification on Photo-response in a Charge Transfer Complex Single Nanowire Device

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Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Cited by 459 publications

References 26 publications

MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

Graphene Oxide as a Promising Hole Injection Layer for MoS2-Based Electronic Devices

Role of Contact and Contact Modification on Photo-response in a Charge Transfer Complex Single Nanowire Device

Contact Info

Product

Resources

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MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts

MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts

Graphene Oxide as a Promising Hole Injection Layer for MoS₂-Based Electronic Devices