Correction: Corrigendum: Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Fontana, Márcio; Deppe, Tristan; Boyd, Anthony K.; Rinzan, Mohamed; Liu, Amy; Paranjape, Makarand; Barbara, Paola

doi:10.1038/srep12589

Cited by 3 publications

(1 citation statement)

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“…[32,33] Accordingly, the photodetectors based on p-n junction or Schottky junction exploit the built-in potential present in the junction to achieve efficient separation and fast transfer of photogenerated carriers, which enables them to detect optical signals without an external bias voltage. [34,35] 2D materials have unique optoelectronic properties of direct bandgap electronic structure and strong exciton effect, which make them have unique electrical and photonic performance and great potential in the field of self-powered sensors with p-n junction, Schottky junction, and photoelectrochemical structures. [36] Graphene is a 2D material that can transfer electrons faster than any known conductor at room temperature.…”

Section: Photoelectric Propertiesmentioning

confidence: 99%

Integrated Self‐Powered Sensors Based on 2D Material Devices

Huo

Wei

Wang

et al. 2022

Adv Funct Materials

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With the development of the Internet of Things, there is an increasing need for clean energy and large-scale sensory systems. Triboelectric/piezoelectric nanogenerators (TENGs/PENGs), have attracted considerable attention as a new type of power generation terminal, which can harvest surrounding energy and convert it into electrical energy. To improve the output performance of nanogenerators (NGs) and diversify related applications, 2D materials with high carrier mobility and excellent piezoelectric properties can be directly used or integrated as different types of self-powered sensors. In this review, the authors first introduce the excellent piezoelectric and optoelectronic properties of 2D materials, followed by the triboelectric series of 2D materials used in TENGs. The categories of integrated self-powered sensors based on 2D materials are then summarized according to their different structures and compositions. We also discuss in detail the recent applications of integrated self-powered sensors based on 2D materials from five aspects. Finally, the challenges and outlooks in the research field of self-powered sensors are featured. Given the continuous development of self-powered sensors based on 2D materials, they are considered to have significant potential for applications in biomedicine, environmental detection, human motion monitoring, energy harvesting, and smart wearable devices.

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Section: Photoelectric Propertiesmentioning

confidence: 99%

Integrated Self‐Powered Sensors Based on 2D Material Devices

Huo

Wei

Wang

et al. 2022

Adv Funct Materials

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Probing Nanoscale Schottky Barrier Characteristics at WSe₂/Graphene Heterostructures via Electrostatic Doping

Richheimer

Vincent

Catanzaro

et al. 2022

Adv Elect Materials

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The adoption of 2D transition metal dichalcogenide (TMD) based optoelectronic devices is limited by Fermi level pinning effects and consequent large contact resistances upon contacting TMDs with bulk metal electrodes. A potential solution for near‐ideal Schottky–Mott behavior and concomitant Schottky barrier height control is proposed by contacting TMDs and (semi‐)metals in van der Waals heterostructures. However, measurement approaches to directly assess interface parameters relevant to the Schottky–Mott rule on a local scale are still lacking. In the present work, a heterostructure of monolayer tungsten diselenide (WSe2) with monolayer graphene (1LG) and bilayer graphene (2LG) is investigated on a bottom‐gate substrate. Kelvin probe force microscopy and tip‐enhanced photoluminescence measurements at different electrostatic doping induced Fermi levels in graphene enable decoupling and quantification of contributions from the interface dipole and electrode work function. These are used to locally probe Schottky barrier characteristics with below 32 nm lateral resolution, demonstrating that the WSe2/1LG junction operates at the Schottky–Mott limit (S ≈ 1). At the WSe2/2LG junction, a reduction of the interface dipole is directly related to changes in excitonic emission properties. These are attributed to charge transfer modulation across the interface, critical for obtaining high‐performance transfer characteristics in transistors and related devices.

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Recent progress in van der Waals heterojunctions

Xia¹,

et al. 2017

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Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.

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Correction: Corrigendum: Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Cited by 3 publications

References 0 publications

Integrated Self‐Powered Sensors Based on 2D Material Devices

Integrated Self‐Powered Sensors Based on 2D Material Devices

Probing Nanoscale Schottky Barrier Characteristics at WSe₂/Graphene Heterostructures via Electrostatic Doping

Recent progress in van der Waals heterojunctions

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Correction: Corrigendum: Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Cited by 3 publications

References 0 publications

Integrated Self‐Powered Sensors Based on 2D Material Devices

Integrated Self‐Powered Sensors Based on 2D Material Devices

Probing Nanoscale Schottky Barrier Characteristics at WSe2/Graphene Heterostructures via Electrostatic Doping

Recent progress in van der Waals heterojunctions

Contact Info

Product

Resources

About

Probing Nanoscale Schottky Barrier Characteristics at WSe₂/Graphene Heterostructures via Electrostatic Doping