Interconnection technology has improved by leaps and bounds since the advent of solder reflow. This has made surface mount technology more robust. Ball Grid Array (BGA) is a demanding surface mount chip package in Integrated Circuits (IC) which uses a grid of solder balls as its connectors. In this preliminary study, load effects of shear test on a single solder joint with varied parameters are briefly discussed. A suitable lead-free solder is used in this study which is Sn-3.5Ag-0.7Cu. Simple Single Factor (SSF) method was used to execute this experimental study. Ansys software was used to simulate and investigate the stress response on a single solder ball joints. The results shows that when the shear height is high the shear stress is reduced.
Wire bonding process is an interconnection method adopted in the semiconductor packaging manufactory. One of the method used to assess the reliability and bond strength of the bonded wires are wire bond shear test .In this study, simulation on wire bond shear test is done to evaluate the stress response of the bonded wire when sheared on a hemispherical surface bond pad. The contrast between three types of wire material:gold(Au), aluminum(Al) and copper(Cu) were carry out to examine the effects of wire material on the stress response of bonded wire during wire bond shear test. The simulation results showed that copper wire bond induces highest stress and gold wire exhibits the least stress response.
Reactive Ion Etch (RIE) has been an important process in the world of microelectronic fabrication. Focus of this preliminary study is on how RIE affects the grain size of aluminum film which is fabricated on substrates. RIE parameters are varied to obtain 16 different recipes which are done using Design of Experiment. Grain size of the samples is recorded for all 16 samples before and after RIE treatment. This produces results that can be compared to obtain the effect of RIE on the aluminum film. Results show that RIE affects the mean grain size of the aluminum film as it increases after RIE treatment.
A study on the resistance of directly sputtered films and treated films of Indium Tin Oxide (ITO) is done to initiate an extensive study on the material. This study involves variation in terms of number of layers and duration of deposition. Treated films are produced by undergoing annealing process which is carried out using Split Type Tube Furnace. Resistance measurements were carried out using Semiconductor Parametric Analyzer (SPA). Results show that the directly sputtered ITO films produced lower resistance compared to the treated ITO films.
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