The role of Reactive Ion Etching(RIE) on wirebond formation: A study on successful rate of thermosonic gold wire on aluminium bondpad

Sauli, Zaliman; Retnasamy, Vithyacharan; Rahman, Norhan Abd; Aziz, M. H. A.; Razak, Hanim Abdul; Palianysamy, Moganraj

doi:10.1109/smelec.2012.6417148

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…over the last 15 years [7][8][9][10].Many previous research studies had been done using the method used in this study. As an example in the study of optimization on basecatalyzed sunflower oil ethanolysis [11], role of RIE in wirebond formation [12],in the investigation study of cutting parameters effects on surface roughness in lathe boring operation [13] and in the study of finite element analysis for grinding of wire-sawn silicon wafers [14]. These previous study shows that this experimental design method can be used in various fields proving the capability of this method..…”

Section: Introductionmentioning

confidence: 89%

Surface Roughness Influence on O2 and Ar RIE Gas Treated Aluminum Surface

Sauli

Retnasamy

Hashim

et al. 2014

AMR

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This study reports on the preliminary investigations on the effect of Reactive Ion Etch (RIE) parameters on the surface characteristics of Al bond pad. Investigation is done employing Design of Experiment (DOE) method. Quantity of Oxygen, Argon, ICP power and BIAS power were varied to get 16 sets of recipes. This provides 16 samples with different combination of RIE parameters. Surface characteristics of the samples were analyzed using Atomic Force Microscopy (AFM).Data collected were in terms of Surface Roughness (RA), Peak Vs Valley (P-V) and Surface Root-Mean-Square Roughness (RMS). Result shows that combination of these RIE parameters does not vastly affect the surface characteristics of the Al bond pad.

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Section: Introductionmentioning

confidence: 89%

Surface Roughness Influence on O2 and Ar RIE Gas Treated Aluminum Surface

Sauli

Retnasamy

Hashim

et al. 2014

AMR

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“…Wire bonding of Gold (Au) wires on aluminium bond pads is a common interconnection in semiconductor packaging [1]. The demand for lower cost and superior physical properties has driven copper (Cu) wires to substitute Au wires in recent years [2].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Surface Roughness on Platinum Deposited Wafer after Reactive Ion Etching Using SF6+Argon Gaseous

Sauli

Retnasamy

Yeow

et al. 2014

AMM

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This paper investigates the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of SF6 and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-4.9288, -6.2383, and-4.7223 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The Bias Power is the most influential factor followed by ICP Power, and working pressure.

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The role of Reactive Ion Etching(RIE) on wirebond formation: A study on successful rate of thermosonic gold wire on aluminium bondpad

Cited by 2 publications

References 3 publications

Surface Roughness Influence on O<sub>2 </sub>and Ar RIE Gas Treated Aluminum Surface

Surface Roughness Influence on O<sub>2 </sub>and Ar RIE Gas Treated Aluminum Surface

Investigation of Surface Roughness on Platinum Deposited Wafer after Reactive Ion Etching Using SF<sub>6</sub>+Argon Gaseous

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