A study on the resistance of directly sputtered films and treated films of Indium Tin Oxide (ITO) is done to initiate an extensive study on the material. This study involves variation in terms of number of layers and duration of deposition. Treated films are produced by undergoing annealing process which is carried out using Split Type Tube Furnace. Resistance measurements were carried out using Semiconductor Parametric Analyzer (SPA). Results show that the directly sputtered ITO films produced lower resistance compared to the treated ITO films.
Preliminary analysis has been done on the reflectance of sputtered Indium Tin Oxide (ITO) layers. The analysis is done for two different types of layers which is the directly sputtered ITO films and the treated ITO films. In both type of the film it is divided into the thickness of the layer and deposition time. Analysis is done using Perkin Elmer Lambda 950 UV/Vis/NIR Spectrophotometer. The working spectral range is from 250 nm to 800 nm (for transmittance), covering the ultra-violet (UV) and visible spectrum. Results shows thatthe directly deposited thin ITO films had lower reflectance compared to the thick films. The reflectance of the thick films with three and four layers was high (95%) compared to the rest of the films. The treated films produce very low reflectance.
An initial study has been conducted to characterize the surface morphology of treated Indium Tin Oxide (ITO). Treatment done is annealing process where the samples are put through heat and annealed for an hour. Time of deposition and layers of ITO has been varied to study the correlation between both.The treated ITO are examined under Atomic Force Microscopy (AFM) for the surface roughness and the grain size. Results shows that deposition time of ITO do play an important role in determining a desired grain size in ITO material.
Indium Tin Oxide (ITO) is a transparent conducting material. The particular electrical and optical properties of the ITO make it becomes an important material that being applied in optoelectronic filed. In this paper, investigation on various parameters in time of deposition and ITO layer on specimen was done. The AFM (Atomic Force Microscope) was used to investigate grain size on specimen. It shows more layer deposition of ITO, it will increase grain size on the specimen. In addition, grain size on specimen was increased after annealing process compared test specimen before annealing process. Besides that, semiconductor parametric analyser was used to examine resistance on ITO films. The higher value of resistance is showed on test specimen after heat treatment compared to test specimen before heat treatment.
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