The anisotropic Raman behavior of SnS flake is found to be strongly dependent on the thickness of flake.

Anisotropic materials, especially two-dimensional (2D) layered materials formed by van der Waals force (vdW) with low-symmetry, have become a scientific hot-spot because their electrical, optical, and thermoelectric properties are highly polarization dependent. The 2D GeSe, a typical anisotropic-layered orthorhombic structure and narrow bandgap (1.1−1.2 eV) semiconductor, potentially meets these demands. In this report, the ultrathin elongated hexagonal GeSe nanoplates were successfully synthesized by the rapid physical vapor deposition method developed here. The ultrathin elongated hexagonal GeSe nanoplates have a zigzag edge in the long edge and an armchair edge in the short edge. In addition, the typical Raman mode exhibited 90°p eriodic vibration, having its maximum intensity between the zigzag direction or the zigzag and armchair direction, indicating an anisotropic electron−phonon interaction. Furthermore, the field effect transistor devices based on the elongated hexagonal GeSe nanoplates were constructed and exhibited the p-type semiconducting behavior with a high photoresponse characteriscs. Finally, the polarized sensitive photocurrent was identified, further revealing the intrinsically anisotropy of the GeSe nanoplate. The results illustrated here may give a useful guidance to synthesize the 2D-layered anisotropic nanomaterials and further advance the development of the polarized photodetector.

Aromatic imides are a class of attractive organic materials with inherently electroactive groups and large π electron‐deficient scaffolds, which hold potential as electrode materials for organic secondary batteries (OSBs). However, the undecorated aromatic imides are usually plagued by low capacity, high solubility in electrolyte, and poor electronic/ionic conductivity. Molecular engineering has been demonstrated to be an effective strategy to address unsatisfying characteristics of the aromatic imides, thereby expanding their scope for applications in OSBs. In this review, the recent research progress in modulation of the capacity, dissolution, and electronic/ionic conductivity of aromatic imides for organic lithium batteries, organic sodium batteries, and redox flow batteries are summarized. In addition, the challenge and prospective of aromatic imides in organic secondary battery applications are also discussed.

No abstract

A high-quality vertical SnS2/SnS heterostructure with excellent photoresponse has been fabricated and demonstrated.

By virtue of the layer-dependent band structure and valley-selected optical/electronic properties, atomically layered transition-metal dichalcogenides (TMDs) exhibit great potentials such as in valleytronics and quantum devices, and have captured significant attentions. Precise control of the optical and electrical properties of TMDs is always the pursuing goal for real applications, and constructing advanced structures that allow playing with more degrees of freedom may hold the key. Here, we introduce a triangular inkslab-like WSe homojunction with a monolayer in the inner surrounded by a multilayer frame. Benefit from this interesting structure, the photoluminescence (PL) peaks redshift up to 50 meV and the charge density increases about 6 times from the center to the edge region of the inner monolayer. We demonstrated that the Se-deficient multilayer frame offers the excessive free electrons for the generation of the electron density gradient inside the monolayer, which also results in the spatial variation and distribution gradient of a series of exciton complexes. Furthermore, we observed the strong rectifying characteristic and clear photovoltaic response across the homojunction through measuring and mapping the photocurrent of the devices. Our result provides another route for efficient modulation of the exciton-complex emissions of TMDs, which is exceptionally desirable for the "layer- and charge-engineered" photonic and optoelectronic devices.

Primary alkylamines are generally used as ligands for the synthesis of colloidal II–VI group quantum dots (QDs).

The confinement of light into nanometer-sized metallic nanogaps can lead to an extremely high field enhancement, resulting in dramatically enhanced absorption, emission, and surface-enhanced Raman scattering (SERS) of molecules embedded in nanogaps. However, low-cost, high-throughput, and reliable fabrication of ultra-high-dense nanogap arrays with precise control of the gap size still remains a challenge. Here, by combining colloidal lithography and atomic layer deposition technique, a reproducible method for fabricating ultra-high-dense arrays of hexagonal close-packed annular nanogaps over large areas is demonstrated. The annular nanogap arrays with a minimum diameter smaller than 100 nm and sub-1 nm gap width have been produced, showing excellent SERS performance with a typical enhancement factor up to 3.1 × 10 and a detection limit of 10 M. Moreover, it can also work as a high-quality field enhancement substrate for studying two-dimensional materials, such as MoSe. Our method provides an attractive approach to produce controllable nanogaps for enhanced light-matter interaction at the nanoscale.