Revealing anisotropy and thickness dependence of Raman spectra for SnS flakes

Li, Mingling; Wu, Yiming; Li, Taishen; Chen, Yulin; Ding, Hongyan; Lin, Yue; Pan, Nan; Wang, Xiaoping

doi:10.1039/c7ra09430b

Cited by 105 publications

(117 citation statements)

References 41 publications

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“…No peaks at 308 and 314 cm −1 , which can be assigned to the strongest Raman peaks of Sn 2 S 3 and SnS 2 , respectively, are observed, confirming the purity of our PLD deposited SnS. We notice that not all peaks can be observed in every Raman curve, which is due to the polarization‐dependent Raman spectra of SnS 48…”

Section: Resultssupporting

confidence: 66%

“…Figure presents the Raman modes of SnS in a) as well as the Raman spectra of our SnS films with different number of MLs deposited on Si/SiO 2 substrates. The crystallographic space group of SnS is

D_{2 h}^{16}

with the center of inversion lying between the double layers and containing 21 optical phonons, in which 2 modes are inactive (2A u ), 7 modes are infrared active (3B 1u , 3B 3u , and 1B 2u ) and 12 modes are Raman tensors ((4A g (3 + 1), 2B 1g , 4B 2g (3 + 1), and 2B 3g (1 + 1)) 41,47–49. In Figure 2b, seven peaks at 51.0, 70.5, 95.5, 160.5, 190.5, 222.5, and 291.0 cm –1 are observed, well matching with the 49, 70, 95, 164, 192, 218, and 290 cm −1 modes observed in SnS single‐crystal material 47.…”

Section: Resultsmentioning

confidence: 99%

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Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Wang

Zhang

Seliverstov

et al. 2019

Adv Elect Materials

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Layered metal monochalcogenides have attracted significant interest in the 2D family since they show different unique properties from their bulk counterparts. The comprehensive synthesis, characterization, and optoelectrical applications of 2D‐layered tin monosulfide (SnS) grown by pulsed laser deposition are reported. Few‐layer SnS‐based field‐effect transistors (FETs) and photodetectors are fabricated on Si/SiO2 substrates. The premium 2D SnS FETs yield an on/off ratio of 3.41 × 106, a subthreshold swing of 180 mV dec−1, and a field effect mobility (µFE) of 1.48 cm2 V−1 s−1 in a 14‐monolayer SnS device. The layered SnS photodetectors show a broad photoresponse from ultraviolet to near‐infrared (365–820 nm). In addition, the SnS phototransistors present an improved detectivity of 9.78 × 1010 cm2 Hz1/2 W−1 and rapid response constants of 60 ms for grow‐time constant τg and 10 ms for decay‐time constant τd under extremely weak 365 nm illumination. This study sheds light on layer‐dependent optoelectronic properties of 2D SnS that promise to be important in next‐generation 2D optoelectronic devices.

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Section: Resultssupporting

confidence: 66%

D_{2 h}^{16}

Section: Resultsmentioning

confidence: 99%

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Wang

Zhang

Seliverstov

et al. 2019

Adv Elect Materials

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“…The intensity of the SnS 2 A 1g mode decreased significantly for the 5 and 10 % Mo doped samples, indicating that only a small SnS 2 fraction remained in the 5 % Mo sample, asserting that the doping results in elimination of the SnS 2 phase, in accordance with the XRD data. The 5 % and 10 % Mo doped samples show additional broad features in the 50–250 cm −1 region, assigned to A g and B 3g modes of thin SnS nanosheets …”

Section: Resultssupporting

confidence: 70%

Structural Transformation of SnS₂ to SnS by Mo Doping Produces Electro/Photocatalyst for Hydrogen Production

Kadam

Ghosh

Bar‐Ziv³

et al. 2020

Chemistry A European J

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SnS and SnS 2 are layered semiconductors, with potential promising properties for electro-and photocatalytic hydrogen (H 2 )p roduction.T he vast knowledge in preparation andm odification of layered structures was still not employed successfully in this system to fully maximize its potential. Here, the first report of structural transformation of SnS 2 into SnS with Mo-doping as ab ifunctional catalyst for the hydrogen evolution reaction (HER) is reported.The structural phase transition optimized the properties of the materi-al, providing am ore delicate morphology with additional catalytic sites. The electrochemical studies showed overpotential of 377 mV at 10 mA cm À2 for HER with Tafel slopes of 100 mV dec À1 in 0.5 m H 2 SO 4 for 10 %M o-SnS. The same structure acts as an efficient photocatalyst in the generation of H 2 from water under visible illumination with rate of 0.136 mmol g À1 h À1 of H 2 ,w hich is 20 times higher than pristine SnS 2 under visible light.[a] Dr.hem. A 2017, 5, 8187 -8208. Figure 7. (a) PhotocatalyticH 2 evolution (b) Performance of 10 %M o-doped SnS in 5cycles after 4hof catalysis. No catalyst-an aqueouss olution containing the sameconcentration of sacrificiala gents Na 2 SO 3 + Na 2 Su nder visible-light irradiation but without photocatalyst.

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“…In comparison with other 2D materials, monochalcogenides exhibit a greater interaction between the layers. They can, nevertheless, be grown in the form of flakes of only a few mono-atomic layers thick [21] with exfoliation energy of the order of graphene [22]. Chalcogenides slabs are semiconductors with low band gap and high mobility and are stable at room temperature [23].…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic properties of few-layer tin chalcogenides

et al. 2019

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Stable structures of layered SnS and SnSe and their associated electronic and vibrational spectra are predicted using first-principles DFT calculations. The calculations show that both materials undergo a phase transformation upon thinning whereby the in-plane lattice parameters ratio a/b converges towards 1, similar to the high-temperature behaviour observed for their bulk counterparts. The electronic properties of layered SnS and SnSe evolve to an almost symmetric dispersion whilst the gap changes from indirect to direct. Characteristic signatures in the phonon dispersion curves and surface phonon states where only atoms belonging to surface layers vibrate should be observable experimentally.

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Revealing anisotropy and thickness dependence of Raman spectra for SnS flakes

Abstract: The anisotropic Raman behavior of SnS flake is found to be strongly dependent on the thickness of flake.

Cited by 105 publications

References 41 publications

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Structural Transformation of SnS₂ to SnS by Mo Doping Produces Electro/Photocatalyst for Hydrogen Production

Spectroscopic properties of few-layer tin chalcogenides

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Revealing anisotropy and thickness dependence of Raman spectra for SnS flakes

Abstract: The anisotropic Raman behavior of SnS flake is found to be strongly dependent on the thickness of flake.

Cited by 105 publications

References 41 publications

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition

Structural Transformation of SnS2 to SnS by Mo Doping Produces Electro/Photocatalyst for Hydrogen Production

Spectroscopic properties of few-layer tin chalcogenides

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Structural Transformation of SnS₂ to SnS by Mo Doping Produces Electro/Photocatalyst for Hydrogen Production