One-step CVD fabrication and optoelectronic properties of SnS<sub>2</sub>/SnS vertical heterostructures

Li, Mingling; Zhu, Yunsong; Li, Taishen; Lin, Yue; Cai, Haiwen; Li, Sijia; Ding, Hongyan; Pan, Nan; Wang, Xiaoping

doi:10.1039/c8qi00251g

Cited by 34 publications

(27 citation statements)

References 50 publications

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“…1a). Note that this geometry is the inverse of previously reported SnS 2 /SnS vertical heterostructures 35 . Selected-area low-energy electron diffraction (micro-LEED) was used to analyze the crystal structure and lattice registry.…”

Section: Resultssupporting

confidence: 59%

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

et al. 2019

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Vertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer twist are of interest for band-structure engineering via twist moiré superlattice potentials. To date, twist-heterostructures have been realized by micromechanical stacking. Direct synthesis is hindered by the tendency toward equilibrium stacking without interlayer twist. Here, we demonstrate that growing a 2D crystal with fixed azimuthal alignment to the substrate followed by transformation of this intermediate enables a potentially scalable synthesis of twisted heterostructures. Microscopy during growth of ultrathin orthorhombic SnS on trigonal SnS2 shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D crystals. Excess sulfur drives a spontaneous transformation of the few-layer SnS to SnS2, whose orientation – rotated 30° against the underlying SnS2 crystal – is defined by the SnS intermediate rather than the substrate. Preferential nucleation of additional SnS on such twisted domains repeats the process, promising the realization of complex twisted stacks by bottom-up synthesis.

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Section: Resultssupporting

confidence: 59%

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

et al. 2019

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“…SnS 2 ‐based optoelectronics devices have shown a remarkable performance over the years. [ 11,23–25 ] However, SnS 2 has sulfur deficiency/vacancies as its intrinsic defects, which could potentially influence its optoelectronic performance. Nonetheless, it has been reported that these intrinsic defects have hindered its optical absorption and caused Fermi level pinning effect, which results in substantial metal contact resistance, thus preventing it from achieving its full potential performance in optoelectronic device applications.…”

Section: Introductionmentioning

confidence: 99%

Giant‐Enhanced SnS₂ Photodetectors with Broadband Response through Oxygen Plasma Treatment

Jing

Suleiman

Zheng

et al. 2020

Adv Funct Materials

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Layered tin disulfide (SnS2) is a vital semiconductor with versatile functionality due to its high carrier mobility and excellent photoresponsivity. However, the intrinsic defects Vs (sulfur vacancies), which cause Fermi level pinning (significant metal contact resistance), hinder its electrical and optoelectrical performance. Herein, oxygen plasma treatment is employed to enhance the optoelectronic performance of SnS2 flakes, which results in artificial sub‐bandgap in SnS2. Consequently, the broadband photosensing (300–750 nm) is remarkably improved. Specifically, under 350 nm illumination, the O2‐plasma‐treated SnS2 photodetector exhibits an enhanced photoresponsivity from 385 to 860 A W−1, the external quantum efficiency and the detectivity improve by one order of magnitude as well as increase the photoswitching response improvement by two orders of magnitude for both rising (τr) and decay (τd) time. This artificial sub‐bandgap can both improve the photoresponse and broaden the response spectra, which paves a new path for the applications of optoelectronics.

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“…[36,173,203] Moreover, the abundant constituent elements, excellent stability, and low toxicity compared to lead and cadmium, also make SnSbased nanostructures more promising than most other semiconductors on the basis of long-term, low-cost, and environmentally benign optoelectronic technologies. [23,25,60,78,87,103,139,[210][211][212][213][214][215] In 2020, Krishnamurthi et al [23] successfully fabricated single-layer and multilayer SnS with lateral dimensions reaching the millimeter scale by utilizing van del Waals transfer of molten Sn on conventional substrates, such as SiO 2 /Si. Figure 21a presents the schematic diagram of SnS NS-based photodetector fabricated on a SiO 2 /Si substrate.…”

Section: Optoelectronicsmentioning

confidence: 99%

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Zhu

et al. 2021

Small Science

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Tin-based binary chalcogenide Sn-X (X ¼ S, Se, Te) compounds have attracted extensive interest in the optical, optoelectronic, catalysis, and flexible systems due to their intriguing performances. [1][2][3][4][5][6][7] The Sn-X (X ¼ S, Se, Te) compounds are typically layered materials and usually have three crystalline phases: hexagonal, monoclinic, and orthorhombic; orthorhombic phase is denoted by chemical formula SnX, and hexagonal and monoclinic phases are labeled as SnX 2 . [8] Until now, SnSe and SnTe compounds have already achieved great progress in many fields, especially for thermoelectronics and ferroelectrics, [9][10][11][12] and many important reviews have been reported on SnSe and SnTe compounds due to their rapid development. [8,[13][14][15][16] For example, in 2020, Chen et al. [14] summarized a comprehensive overview of controlled synthesis, characterization, and thermoelectric performance in SnSe. In 2018, Shi et al. [8] summarized the growth, characterization, and applications (photovoltaics, supercapacitors, rechargeable batteries, phase-change memory devices, and topological insulator) of SnSe. In 2018, Li et al. [15] reviewed the development of SnS, SnSe, and SnTe, mainly focusing on the controllable tuning of the electron and phonon transport as well as the challenges for further optimization and practical applications. Among Sn-X (X ¼ S, Se, Te) compounds, tin monosulfide (SnS) as a typical black phosphorus analogue, has also received intensive scientific attention due to its unique properties, such as inexpensive, sustainable, suitable bandgap between Si (1.12 eV) and GaAs (1.43 eV), [17] high absorption coefficient (10 À4 cm À1 ), [18] strong mechanical properties, and anisotropic optoelectronic, [19][20][21] which are of great value in optoelectronics, catalysis, sensors, and nanomedicines. [7,[22][23][24][25][26][27] In addition, layered SnS with suitable spacing structures hold promising potentials in the field of lithium (Li)-ion batteries and sodium (Na)-ion batteries due to their relatively high electrical conductivity and theoretical capacity. [28][29][30][31][32] However, although popular SnS has achieved great progress in a variety of fields, few comprehensive reviews have hitherto focused on the field of SnS-based nanostructures and their fascinating applications.Inspired by important reviews on SnSe reported by Chen [14] and Li [8] in recent years, we comprehensively summarized the synthesis, characterization, and the latest progress of SnS-based nanostructures, as shown in Figure 1. First, the most commonly employed techniques (hydrothermal, vapor deposition, electrostatic assembly, etc.) for preparing SnS and SnS-based nanostructures are presented in detail with their recent progress. Furthermore, the fundamental properties (crystal structure, electronic band structure, optical property, and Raman spectroscopy) and diverse applications (batteries, solar cells, catalysis, optoelectronics, sensors, ferroelectrics, thermoelectrics, nonlinear properties, and biomedical applicatio...

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One-step CVD fabrication and optoelectronic properties of SnS₂/SnS vertical heterostructures

Abstract: A high-quality vertical SnS2/SnS heterostructure with excellent photoresponse has been fabricated and demonstrated.

Cited by 34 publications

References 50 publications

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Giant‐Enhanced SnS₂ Photodetectors with Broadband Response through Oxygen Plasma Treatment

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

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One-step CVD fabrication and optoelectronic properties of SnS2/SnS vertical heterostructures

Abstract: A high-quality vertical SnS2/SnS heterostructure with excellent photoresponse has been fabricated and demonstrated.

Cited by 34 publications

References 50 publications

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Giant‐Enhanced SnS2 Photodetectors with Broadband Response through Oxygen Plasma Treatment

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Contact Info

Product

Resources

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One-step CVD fabrication and optoelectronic properties of SnS₂/SnS vertical heterostructures

Giant‐Enhanced SnS₂ Photodetectors with Broadband Response through Oxygen Plasma Treatment