Passivating surface and bulk defects of perovskite films has been proven to be an effective way to minimize nonradiative recombination losses in perovskite solar cells (PVSCs). The lattice interference and perturbation of atomic periodicity at the perovskite surfaces often significantly affect the material properties and device efficiencies. By tailoring the terminal groups on the perovskite surface and modifying the surface chemical environment, the defects can be reduced to enhance the photovoltaic performance and stability of derived PVSCs. Here, we report a rationally designed bifunctional molecule, piperazinium iodide (PI), containing both R 2 NH and R 2 NH 2 + groups on the same six-membered ring, behaving both as an electron donor and an electron acceptor to react with different surface-terminating ends on perovskite films. The resulting perovskite films after defect passivation show released surface residual stress, suppressed nonradiative recombination loss, and more n-type characteristics for sufficient energy transfer. Consequently, charge recombination is significantly suppressed to result in a high open-circuit voltage (V OC ) of 1.17 V and a reduced V OC loss of 0.33 V. A very high power conversion efficiency (PCE) of 23.37% (with 22.75% certified) could be achieved, which is the highest value reported for inverted PVSCs. Our work reveals a very effective way of using rationally designed bifunctional molecules to simultaneously enhance the device performance and stability.

Increasing the power conversion efficiency (PCE) of the two‐dimensional (2D) perovskite‐based solar cells (PVSCs) is really a challenge. Vertical orientation of the 2D perovskite film is an efficient strategy to elevate the PCE. In this work, vertically orientated highly crystalline 2D (PEA)2(MA)n–1PbnI3n+1 (PEA= phenylethylammonium, MA = methylammonium, n = 3, 4, 5) films are fabricated with the assistance of an ammonium thiocyanate (NH4SCN) additive by a one‐step spin‐coating method. Planar‐structured PVSCs with the device structure of indium tin oxide (ITO)/poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)/(PEA)2(MA)n–1PbnI3n+1/[6,6]‐phenyl‐C61‐butyric acid methyl ester/bahocuproine/Ag are fabricated. The PCE of the PVSCs is boosted from the original 0.56% (without NH4SCN) to 11.01% with the optimized NH4SCN addition at n = 5, which is among the highest PCE values for the low‐n (n < 10) 2D perovskite‐based PVSCs. The improved performance is attributed to the vertically orientated highly crystalline 2D perovskite thin films as well as the balanced electron/hole transportation. The humidity stability of this oriented 2D perovskite thin film is also confirmed by the almost unchanged X‐ray diffraction patterns after 28 d exposed to the moisture in a humidity‐controlled cabinet (Hr = 55 ± 5%). The unsealed device retains 78.5% of its original PCE after 160 h storage in air atmosphere with humidity of 55 ± 5%. The results provide an effective approach toward a highly efficient and stable PVSC for future commercialization.

Efficient lead halide perovskite solar cells use hole-blocking layers to help collection of photogenerated electrons and to achieve high open-circuit voltages. Here, we report the realization of efficient perovskite solar cells grown directly on fluorine-doped tin oxide-coated substrates without using any hole-blocking layers. With ultraviolet-ozone treatment of the substrates, a planar Au/hole-transporting material/CH 3 NH 3 PbI 3-x Cl x /substrate cell processed by a solution method has achieved a power conversion efficiency of over 14% and an open-circuit voltage of 1.06 V measured under reverse voltage scan. The open-circuit voltage is as high as that of our best reference cell with a TiO 2 hole-blocking layer. Besides ultraviolet-ozone treatment, we find that involving Cl in the synthesis is another key for realizing high open-circuit voltage perovskite solar cells without hole-blocking layers. Our results suggest that TiO 2 may not be the ultimate interfacial material for achieving high-performance perovskite solar cells.

The non-radiative energy losses at both top and bottom interfaces of perovskite were simultaneously suppressed by introducing LAIs between the hole transport layer and perovskite layer. More importantly, the LAIs have also effectively inhibited the phase segregation on the perovskite surface, enabling homogeneous surface properties. As a result, a champion efficiency of over 22% was realized for p-i-n structured PVSCs, which is among the highest efficiencies reported for p-i-n structured PVSCs.

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Mg doping improves interfacial contact and endows low hysteresis high temperature processed SnO2-based PSCs with a steady-state PCE of 14.55%.

A fullerene derivative C9 with anchoring hydroxyl groups on the long side chain is used to modify the surface of SnO2 in planar heterojunction perovskite solar cells, which exhibit high efficiency up to 21.3% with negligible hysteresis and good device stability.

Despite the rapid increase of efficiency, perovskite solar cells (PSCs) still face some challenges, one of which is the current-voltage hysteresis. Herein, it is reported that yttrium-doped tin dioxide (Y-SnO ) electron selective layer (ESL) synthesized by an in situ hydrothermal growth process at 95 °C can significantly reduce the hysteresis and improve the performance of PSCs. Comparison studies reveal two main effects of Y doping of SnO ESLs: (1) it promotes the formation of well-aligned and more homogeneous distribution of SnO nanosheet arrays (NSAs), which allows better perovskite infiltration, better contacts of perovskite with SnO nanosheets, and improves electron transfer from perovskite to ESL; (2) it enlarges the band gap and upshifts the band energy levels, resulting in better energy level alignment with perovskite and reduced charge recombination at NSA/perovskite interfaces. As a result, PSCs using Y-SnO NSA ESLs exhibit much less hysteresis and better performance compared with the cells using pristine SnO NSA ESLs. The champion cell using Y-SnO NSA ESL achieves a photovoltaic conversion efficiency of 17.29% (16.97%) when measured under reverse (forward) voltage scanning and a steady-state efficiency of 16.25%. The results suggest that low-temperature hydrothermal-synthesized Y-SnO NSA is a promising ESL for fabricating efficient and hysteresis-less PSC.