Lead halide perovskite solar cells with the high efficiencies typically use high-temperature processed TiO2 as the electron transporting layers (ETLs). Here, we demonstrate that low-temperature solution-processed nanocrystalline SnO2 can be an excellent alternative ETL material for efficient perovskite solar cells. Our best-performing planar cell using such a SnO2 ETL has achieved an average efficiency of 16.02%, obtained from efficiencies measured from both reverse and forward voltage scans. The outstanding performance of SnO2 ETLs is attributed to the excellent properties of nanocrystalline SnO2 films, such as good antireflection, suitable band edge positions, and high electron mobility. The simple low-temperature process is compatible with the roll-to-roll manufacturing of low-cost perovskite solar cells on flexible substrates.

Thin-film photovoltaics based on organic–inorganic hybrid perovskite light absorbers have recently emerged as a promising low-cost solar energy harvesting technology.

Efficient lead halide perovskite solar cells use hole-blocking layers to help collection of photogenerated electrons and to achieve high open-circuit voltages. Here, we report the realization of efficient perovskite solar cells grown directly on fluorine-doped tin oxide-coated substrates without using any hole-blocking layers. With ultraviolet-ozone treatment of the substrates, a planar Au/hole-transporting material/CH 3 NH 3 PbI 3-x Cl x /substrate cell processed by a solution method has achieved a power conversion efficiency of over 14% and an open-circuit voltage of 1.06 V measured under reverse voltage scan. The open-circuit voltage is as high as that of our best reference cell with a TiO 2 hole-blocking layer. Besides ultraviolet-ozone treatment, we find that involving Cl in the synthesis is another key for realizing high open-circuit voltage perovskite solar cells without hole-blocking layers. Our results suggest that TiO 2 may not be the ultimate interfacial material for achieving high-performance perovskite solar cells.

Owing to growing environmental concerns, the development of lead-free piezoelectrics with comparable performance to the benchmark Pb­(Zr,Ti)­O3 (PZT) becomes of great urgency. However, a further enhancement of lead-free piezoelectrics based on existing strategies has reached a bottleneck. Here we achieve a slush polar state with multiphase coexistence in lead-free potassium–sodium niobate (KNN) piezoceramics, which shows a novel relaxor behavior, i.e., frequency dispersion at the transition between different ferroelectric phases. It is very different from the conventional relaxor behavior which occurs at the paraelectric–ferroelectric phase transition. We obtain an ultrahigh piezoelectric coefficient (d 33) of 650 ± 20 pC/N, the largest value of nontextured KNN-based ceramics, outperforming that of the commercialized PZT-5H. Atomic-resolution polarization mapping by Z-contrast imaging from different orientations reveals the entire material to comprise polar nanoregions with multiphase coexistence, which is again very different from conventional ferroelectric relaxors which have polar domains within a nonpolar matrix. Theoretical simulations validate the significantly decreased energy barrier and polarization anisotropy, which is facilitated by the high-density domain boundaries with easy polarization rotation bridging the multiphase-coexisting nanodomains. This work demonstrates a new strategy for designing lead-free piezoelectrics with further enhanced performance, which should also be applicable to other functional materials requiring a slush (flexible) state with respect to external stimulus.

A perovskite solar cell with a thin TiO2 compact film prepared by thermal oxidation of sputtered Ti film achieved a high efficiency of 15.07%. The thin TiO2 film prepared by thermal oxidation is very dense and inhibits the recombination process at the interface. The optimum thickness of the TiO2 compact film prepared by thermal oxidation is thinner than that prepared by spin-coating method. Also, the TiO2 compact film and the TiO2 porous film can be sintered at the same time. This one-step sintering process leads to a lower dark current density, a lower series resistance, and a higher recombination resistance than those of two-step sintering. Therefore, the perovskite solar cell with the TiO2 compact film prepared by thermal oxidation has a higher short-circuit current density and a higher fill factor.

Mg doping improves interfacial contact and endows low hysteresis high temperature processed SnO2-based PSCs with a steady-state PCE of 14.55%.

Despite the rapid increase of efficiency, perovskite solar cells (PSCs) still face some challenges, one of which is the current-voltage hysteresis. Herein, it is reported that yttrium-doped tin dioxide (Y-SnO ) electron selective layer (ESL) synthesized by an in situ hydrothermal growth process at 95 °C can significantly reduce the hysteresis and improve the performance of PSCs. Comparison studies reveal two main effects of Y doping of SnO ESLs: (1) it promotes the formation of well-aligned and more homogeneous distribution of SnO nanosheet arrays (NSAs), which allows better perovskite infiltration, better contacts of perovskite with SnO nanosheets, and improves electron transfer from perovskite to ESL; (2) it enlarges the band gap and upshifts the band energy levels, resulting in better energy level alignment with perovskite and reduced charge recombination at NSA/perovskite interfaces. As a result, PSCs using Y-SnO NSA ESLs exhibit much less hysteresis and better performance compared with the cells using pristine SnO NSA ESLs. The champion cell using Y-SnO NSA ESL achieves a photovoltaic conversion efficiency of 17.29% (16.97%) when measured under reverse (forward) voltage scanning and a steady-state efficiency of 16.25%. The results suggest that low-temperature hydrothermal-synthesized Y-SnO NSA is a promising ESL for fabricating efficient and hysteresis-less PSC.

In this letter, we report perovskite solar cells with thin dense Mg-doped TiO 2 as hole-blocking layers (HBLs), which outperform cells using TiO 2 HBLs in several ways: higher open-circuit voltage (V oc ) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO 2 as compared to TiO 2 such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V oc . In addition, the Mg-modulated TiO 2 with lower VBM played a better role in the holeblocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device. V C 2015 AIP Publishing LLC.